US2013302923A1PendingUtilityA1

Method for manufacturing an active matrix organic light emitting diode

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Assignee: KOREA ELECTRONICS TELECOMMPriority: Jan 5, 2011Filed: Jun 3, 2013Published: Nov 14, 2013
Est. expiryJan 5, 2031(~4.4 yrs left)· nominal 20-yr term from priority
Inventors:Sang Hee ParkChi-Sun HwangByoung Gon Yu
H10K 59/8792H10K 50/865H10D 86/411H10D 30/6755H10D 86/60H10D 30/6723H10K 59/121H10K 59/38H01L 51/5284
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Claims

Abstract

Disclosed are an active matrix organic light emitting diode and a method for manufacturing the same. The active matrix organic light emitting diode includes: a substrate; a black matrix formed above a part of the substrate; at least one thin film transistor formed above the black matrix; a passivation film formed to entirely cover the at least one thin film transistor; a planarizing layer formed above the passivation film; a color filter formed above an upper part of the planarizing layer opposite to the position where the at least one thin film transistor is formed; and an organic light emitting diode formed above the color filter.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A method for manufacturing an active matrix organic light emitting diode, comprising:
 forming a black matrix above a part of a substrate;   forming at least one thin film transistor above the black matrix;   forming a passivation film above and entirely covering the at least one thin film transistor;   forming a planarizing layer above the passivation film;   forming a color filter above an upper part of the planarizing layer opposite to the position where the at least one thin film transistor is formed; and   forming an organic light emitting diode above the color filter.   
     
     
         2 . The method of  claim 1 , wherein the substrate is formed of any one of glass and plastic. 
     
     
         3 . The method of  claim 1 , wherein the transmittance of the black matrix is 0 to 50%. 
     
     
         4 . The method of  claim 1 , further comprising:
 after the forming of the black matrix, forming a planarizing film between the black matrix and the at least one thin film.   
     
     
         5 . The method of  claim 1 , wherein the black matrix includes an organic material or an inorganic material. 
     
     
         6 . The method of  claim 1 , wherein in the forming of the black matrix, the black matrix is formed to have a thickness of 100 to 10000 Å. 
     
     
         7 . The method of  claim 1 , wherein in the forming of the black matrix, the black matrix is formed of a single layer or multiple layers.

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