Substrate for an organic electronic element and a production method therefor

Abstract

The present invention relates to a substrate for an organic electronic element that enables surface resistance to be reduced and light-extraction efficiency improved, the substrate including: a base substrate; a scattering layer which is formed on the base substrate and includes an conductive pattern for reducing the surface resistance of an electrode, scattering particles for scattering light and a binder, and which forms an uneven structure in the surface opposite the base substrate; and a planarizing layer which is formed on the scattering layer and flattens the surface undulations caused by the uneven structure of the scattering layer, wherein the refractive index (Na) of the scattering particles and the refractive index (Nb) of the planarizing layer satisfy the relationship in formula 1 below. [Formula 1] |Na−Nb|≧0.3. In the formula as used herein, Na signifies the refractive index of the scattering particles and Nb signifies the refractive index of the planarizing layer.

1 . A substrate for an organic electronic element comprising:
 a base substrate;   a scattering layer comprising a conductive pattern configured to lower a sheet resistance of an electrode, scattering particles scattering light and a binder; forming an uneven structure on the surface opposite to the base substrate, and formed on the base substrate; and   a planarizing layer formed on the scattering layer and planarizing the surface undulations caused by the uneven structure of the scattering layer,   wherein the refractive index (Na) of the scattering particles and the refractive index (Nb) of the planarizing layer satisfy the relationship in formula 1 below:
   | Na−Nb|≧ 0.3  (1)
 
   wherein the “Na” represents the refractive index of the scattering particles and the “Nb” represents the refractive index of the planarizing layer.   
     
     
         2 . The substrate of  claim 1 , wherein one surface of the conductive pattern is exposed on the planarized surface formed by the planarizing layer, and a ratio of the area of the exposed conductive pattern on the surface of the planarizing layer with respect to the area of the entire surface of the planarizing surface is from 0.001% to 50%. 
     
     
         3 . The substrate of  claim 1 , wherein a height of the conductive pattern is from 0.01 μm to 50 μm, and a width of the conductive pattern is from 0.1 μm to 500 μm. 
     
     
         4 . The substrate of  claim 1 , wherein the conductive pattern comprises at least one selected from the group consisting of Ag, Au, Al, Cu, Cr, and Mo/Al/Mo. 
     
     
         5 . The substrate of  claim 1 , wherein the conductive pattern is in a network structure of conductive material comprising carbon, a metal paste comprising silver or a silver (Ag) paste. 
     
     
         6 . The substrate of  claim 1 , wherein the refractive index of the scattering particles (Na) is from 1.0 to 2.0, and the refractive index of the planarizing layer (Nb) is from 1.7 to 2.5. 
     
     
         7 . The substrate of  claim 1 , wherein the refractive index (Na) of the scattering particles is from 2.0 to 3.5, and the refractive index (Nb) of the planarizing layer is from 1.7 to 2.5. 
     
     
         8 . The substrate of  claim 1 , wherein the scattering particle is at least one selected from the group consisting of silicon, silica, glass, titanium oxide, magnesium fluoride, zirconium oxide, alumina, cerium oxide, hafnium oxide, niobium pentoxide, tantalum pentoxide, indium oxide, tin oxide, indium tin oxide, zinc oxide, zinc sulfide, calcium carbonate, barium sulfate, silicon nitride, and aluminum nitride. 
     
     
         9 . The substrate of  claim 1 , wherein an average diameter of the scattering particles is from 0.01 μm to 20 μm. 
     
     
         10 . The substrate of  claim 1 , wherein the binder in the scattering layer is an inorganic or organic-inorganic composite binder. 
     
     
         11 . The substrate of  claim 10 , wherein the binder in the scattering layer is at least one selected from the group consisting of silicon oxide; silicon nitride; silicon oxynitride; alumina; and an inorganic or organic-inorganic composite based on a siloxane bond. 
     
     
         12 . The substrate of  claim 1 , wherein the planarizing layer comprises an inorganic binder or organic-inorganic composite binder. 
     
     
         13 . The substrate of  claim 12 , wherein the planarizing layer comprises at least one selected from the group consisting of silicon oxide; silicon nitride; silicon oxynitride; alumina; and an inorganic or organic-inorganic composite based on a siloxane bond. 
     
     
         14 . The substrate of  claim 12 , wherein the planarizing layer further comprises a high refractive filler. 
     
     
         15 . The substrate of  claim 14 , wherein the high refractive filler is at least one selected from the group consisting of alumina, aluminum nitride, zirconium oxide, titanium oxide, cerium oxide, hafnium oxide, niobium pentoxide, tantalum pentoxide, indium oxide, tin oxide, indium tin oxide, zinc oxide, silicon, zinc sulfide, calcium carbonate, barium sulfate and silicon nitride. 
     
     
         16 . A method for preparing a substrate for an organic electronic element comprising
 forming a conductive pattern on a base substrate;   forming a scattering layer by filling a coating solution comprising a binder and scattering particles on a base substrate, on which the conductive patterns are formed; and   forming a planarizing layer on the formed scattering layer.   
     
     
         17 . The method of  claim 16 , wherein the forming of the scattering layer is conducted by CVD, PVD or sol-gel coating. 
     
     
         18 . The method of  claim 16 , further comprising polishing an upper surface of the formed planarizing layer after the forming of the planarizing layer. 
     
     
         19 . An organic electronic device comprising the substrate of  claim 1  and an organic electronic element formed on the substrate.