Semiconductor device employing fin-type gate and method for manufacturing the same

Abstract

A semiconductor device comprises an active region having an upper portion and a sidewall portion which are protruded from the top surface of a device isolation region, and a silicide film disposed in the upper portion and the sidewall portion of the active region, thereby effectively reducing resistance in a source/drain region of the semiconductor device. As a result, the entire resistance of the semiconductor device comprising a fin-type gate can be reduced to improve characteristics of the semiconductor device.

1 . A semiconductor device comprising:
 an active region having an upper portion and a sidewall portion protruding from an upper portion of a device isolation region; and   a silicide film disposed over the upper portion and the sidewall portion of the active region.   
     
     
         2 . The semiconductor device according to  claim 1 , further comprising a gate line disposed over the active region. 
     
     
         3 . The semiconductor device according to  claim 2 , wherein the gate line includes a gate oxide film, a gate layer and a gate hard mask layer. 
     
     
         4 . The semiconductor device according to  claim 1 , further comprising an interlayer insulating film planarized with the gate line over the device isolation region. 
     
     
         5 . The semiconductor device according to  claim 4 , further comprising a landing plug connected to the silicide film. 
     
     
         6 - 20 . (canceled)