Solid-state image sensor, method of manufacturing the same, and image pickup apparatus

Abstract

Disclosed is a solid-state image sensor including a photoelectric converter, a charge detector, and a transfer transistor. The photoelectric converter stores a signal charge that is subjected to photoelectric conversion. The charge detector detects the signal charge. The transfer transistor transfers the signal charge from the photoelectric converter to the charge detector. In the solid-state image sensor, the transfer transistor includes a gate insulating film, a gate electrode formed on the gate insulating film, a first spacer formed on a sidewall of the gate electrode on a side of the photoelectric converter, and a second spacer formed on another sidewall of the gate electrode on a side of the charge detector. The first spacer is longer than the second spacer.

What is claimed is: 
     
         1 . A method of manufacturing a solid-state image sensor, comprising:
 forming a gate electrode on a semiconductor substrate through a first insulating film;   etching the gate electrode so that a part of the gate electrode on a side of a photoelectric converter formation region is lower than a part of the gate electrode on a side of a charge detector formation region;   forming a second insulating film on the semiconductor substrate in a state of covering the first insulating film and the gate electrode; and   forming, by etching the first insulating film and the second insulating film, a first spacer on a sidewall of the gate electrode on the side of the photoelectric converter formation region and a second spacer on a sidewall of the gate electrode on the side of the charge detector formation region.   
     
     
         2 . A method of manufacturing a solid-state image sensor, comprising:
 forming a gate electrode on a semiconductor substrate through a first insulating film;   forming a second insulating film on the semiconductor substrate in a state of covering the first insulating film and the gate electrode;   forming, by etching the first insulating film and the second insulating film, a first spacer on a sidewall of the gate electrode on a side of a photoelectric converter formation region and a second spacer on a sidewall of the gate electrode on a side of a charge detector formation region; and   etching the first spacer.