Method of fabricating a differential doped solar cell

Abstract

A method of fabricating a differential doped solar cell is provided. The method comprises the steps of (a) providing a light doped semiconductor substrate; (b) forming a heavy doped layer having the same type of dopant used in step (a) on a front surface of the semiconductor substrate; and (c) forming an emitter layer having a different type of dopant used in step (a) on a surface of the heavy doped layer to constitute a p-n junction with the heavy doped layer.

What is claimed is: 
     
         1 . A method of fabricating a differential doped solar cell comprising the steps of:
 (a) providing a light doped semiconductor substrate;   (b) forming a heavy doped layer having the same type of dopant used in step (a) on a front surface of the semiconductor substrate; and   (c) forming an emitter layer having a different type of dopant used in step (a) on a surface of the heavy doped layer to constitute a p-n junction with the heavy doped layer.   
     
     
         2 . The method as claimed in  claim 1 , wherein the light doped semiconductor substrate is a p-type silicon substrate and the emitter layer is an n-type emitter layer. 
     
     
         3 . The method as claimed in  claim 1 , wherein the light doped semiconductor substrate is doped with boron. 
     
     
         4 . The method as claimed in  claim 1 , further comprising a step of forming a texturing structure on a surface of the light doped semiconductor substrate following the step (a). 
     
     
         5 . The method as claimed in  claim 1 , further comprising a step of removing a phosphorus silicate glass layer which is formed on the emitter layer following the step (c). 
     
     
         6 . The method as claimed in  claim 1 , further comprising a step of laser edge isolation of cutting a groove having a depth that exceeds the level of the p-n junction along the edge of the semiconductor substrate by a laser beams following the step (c). 
     
     
         7 . The method as claimed in  claim 1 , further comprising a step of forming a passivation layer on the emitter layer following the step (c). 
     
     
         8 . The method as claimed in  claim 1 , further comprising steps of forming a rear surface electrical conductive paste, a rear surface metal paste and a front surface electrical conductive paste following the step (c).