Solid-state imaging device, manufacturing method thereof, electronic apparatus, and semiconductor device

Abstract

A semiconductor device includes a substrate, a region including a semiconductor element on the substrate, and at least one guard ring structure provided around the region. The guard ring structure includes a guard ring and at least one portion comprised of the substrate.

What is claimed is: 
     
         1 . A method for manufacturing a solid-state imaging device, said method comprising:
 forming at least one guard ring structure by (a) forming at least one trench in a portion of a substrate where a guard ring is to be formed, and (b) filling the trench with a material to form the guard ring, the material of the guard ring being different from a material of the substrate, and   dicing the substrate around the at least one guard ring structure,   wherein,   at the time of dicing, the at least one guard ring structure includes the guard ring and at least one portion comprised of the substrate.   
     
     
         2 . The method of  claim 1 , further comprising:
 forming an alignment mark by (a) forming at least one trench in a portion of the substrate where the alignment mark is to be formed and (b) filling the trench of the alignment mark with a material to form the alignment mark, wherein,   the alignment mark and the at least one guard ring structure are formed at the same time.   
     
     
         3 . The method of  claim 1 , further comprising:
 forming an interconnect layer on one side of the substrate; and   forming a guard ring structure in the interconnect layer,   wherein,
 a material of a guard ring of the guard ring structure in the interconnect layer is different than a material of the interconnect layer. 
   
     
     
         4 . The method of  claim 1 , further comprising:
 planarizing a surface of the substrate to expose the guard ring.   
     
     
         5 . The method of  claim 1 , further comprising:
 planarizing a surface of the substrate,   wherein,
 a thickness of the planarized substrate is greater than a thickness of the guard ring. 
   
     
     
         6 . The method of  claim 1 , further comprising forming a photodiode within the substrate at a pixel region. 
     
     
         7 . The method of  claim 1 , wherein the solid-state imaging device is a backside illuminated type device.