Semiconductor device and method of manufacturing the same

Abstract

A method of manufacturing a semiconductor device includes: a step of forming an inorganic insulating film and an organic insulating film on one surface of a first substrate; a step of forming an opening portion by dry-etching a laminated film of them; a step of forming a bump electrode inside the opening portion; and a step (bonding step) of bonding the one surface of the first substrate having a bump electrode formed thereon and one surface of a second substrate having a bump electrode formed thereon to each other. A surface treatment on the inorganic insulating film is performed subsequent to the step of forming the opening portion but prior to the bonding step. By performing the surface treatment on the organic insulating film, connecting property between the substrates can be improved.

What is claimed is: 
     
         1 . A semiconductor device comprising:
 a laminated insulating film having a first insulating film that is arranged on an upper portion of one surface of a first substrate and made of an inorganic film and a second insulating film that is arranged on the first insulating film and made of an organic film; and   a first electrode that is arranged inside a first opening portion formed by dry-etching the laminated insulating film, and   the second insulating film being a heat-resistant insulating film.   
     
     
         2 . The semiconductor device according to  claim 1 ,
 wherein the heat-resistant insulating film contains polybenzoxazole, polyimide, or benzocyclobutene.   
     
     
         3 . The semiconductor device according to  claim 1 ,
 wherein the first substrate is in a wafer state.   
     
     
         4 . The semiconductor device according to  claim 1 ,
 wherein the semiconductor device includes a second substrate connected to the one surface side of the first substrate.   
     
     
         5 . The semiconductor device according to  claim 4 ,
 wherein the second substrate further includes:   the other laminated insulating film having a third insulating film that is arranged on an upper portion of one surface of the second substrate and made of an inorganic film and a fourth insulating film that is arranged on the third insulating film and made of an organic film; and   a second electrode that is arranged inside a second opening portion formed by dry-etching the other laminated insulating film, and,   in the first substrate and the second substrate,   the second insulating film and the fourth insulating film are bonded to each other so that the first electrode and the second electrode are connected to each other.   
     
     
         6 . The semiconductor device according to  claim 5 ,
 wherein the fourth insulating film contains polybenzoxazole, polyimide, or benzocyclobutene.   
     
     
         7 . The semiconductor device according to  claim 5 ,
 wherein the first substrate and the second substrate are in a wafer state.   
     
     
         8 . A method of manufacturing a semiconductor device for electrically connecting a first electrode and a second electrode by laminating a first substrate having the first electrode formed on one surface thereof and a second substrate having the second electrode formed on one surface thereof and by bonding the one surface of the first substrate and the one surface of the second substrate to each other, the method comprising steps of:
 (a) forming a first insulating film made of an inorganic film on the one surface of the first substrate;   (b) forming a second insulating film made of an organic film on the first insulating film;   (c) forming a first opening portion by dry-etching the first insulating film and the second insulating film;   (d) forming the first electrode by burying a first conductive film inside the first opening portion; and   (e) bonding the one surface of the first substrate and the one surface of the second substrate to each other, and   a step of performing a surface treatment on the second insulating film being provided subsequent to the step of (c) but prior to the step of (e).   
     
     
         9 . The method of manufacturing the semiconductor device according to  claim 8 ,
 wherein the second insulating film contains polybenzoxazole, polyimide, or benzocyclobutene.   
     
     
         10 . The method of manufacturing the semiconductor device according to  claim 8 ,
 wherein the dry-etching is performed under plasma atmosphere.   
     
     
         11 . The method of manufacturing the semiconductor device according to  claim 8 ,
 wherein the surface treatment is a hydrogen radical treatment.   
     
     
         12 . The method of manufacturing the semiconductor device according to  claim 11 ,
 wherein the second insulating film contains polybenzoxazole, and a carbon-ion amount of a surface portion of the second insulating film is reduced by the hydrogen radical treatment.   
     
     
         13 . The method of manufacturing the semiconductor device according to  claim 8 ,
 wherein, in a step of forming the second electrode on the one surface of the second substrate, the method further includes steps of:   (a2) forming a third insulating film made of an inorganic film on the one surface of the second substrate;   (b2) forming a fourth insulating film made of an organic film on the third insulating film;   (c2) forming a second opening portion by dry-etching the third insulating film and the fourth insulating film; and   (d2) forming the second electrode by burying a second conductive film inside the second opening portion, and   a surface treatment on the fourth insulating film is provided subsequent to the step of (c2) but prior to the step of (e).   
     
     
         14 . The method of manufacturing the semiconductor device according to  claim 13 ,
 wherein the step of (e) is a step of thermally compressing and bonding the second insulating film and the fourth insulating film to each other so that the first electrode and the second electrode are connected to each other.   
     
     
         15 . The method of manufacturing the semiconductor device according to  claim 14 ,
 wherein the first substrate and the second substrate are in a wafer state, and,   the method further includes steps of, after the step of (e):   (f) forming the first substrate or the second substrate so as to be a thin film; and   (g) after the step of (f), cutting the first substrate and the second substrate.