Consumable part for use in a plasma processing apparatus

Abstract

A method of reusing a consumable part for use in a plasma processing apparatus includes cleaning a surface of the consumable part made of SiC that has been eroded by a first plasma process performed for a specific period of time. The method further includes depositing SiC on the cleaned surface of the eroded consumable part by CVD. The method also includes remanufacturing a consumable part having a predetermined shape by machining the eroded consumable part on which the SiC is deposited for performing a second plasma process on a substrate by using the remanufactured consumable part.

1 . A consumable part for reuse in a plasma processing apparatus, the consumable part comprising:
 a base portion including a part of a first silicon carbide (SiC) formed by depositing SiC by a first chemical vapor deposition (CVD) process, the base portion having been eroded by a first plasma process performed in the plasma processing apparatus; and   a remanufactured portion including a part of a second SiC formed by depositing SiC by a second CVD process on a surface of the base portion.   
     
     
         2 . The consumable part of  claim 1 , wherein the first SiC is formed by depositing SiC around a core by the first CVD process, the core being formed of graphite or sintered SiC, and
 wherein the base portion is manufactured by machining the first SiC and removing the core such that the base portion includes the part of the first SiC but does not include the core.   
     
     
         3 . The consumable part of  claim 1 , wherein there is no stepped portion at a boundary between the base portion and the remanufactured portion. 
     
     
         4 . The consumable part of  claim 1 , wherein an erosion rate of the base portion is identical to an erosion rate of the remanufactured portion. 
     
     
         5 . A plasma processing apparatus comprising:
 a chamber configured to accommodate therein a substrate;   a susceptor configured to mount the substrate;   a processing gas introducing unit configured to introduce a processing gas into the chamber;   a plasma generation unit configured to generate a plasma of the processing gas in the chamber;   a consumable part arranged in the chamber,   wherein the consumable part includes:   a base portion including a part of a first silicon carbide (SiC) formed by depositing SiC by a first chemical vapor deposition (CVD) process, the base portion having been eroded by a first plasma process performed in the plasma processing apparatus; and   a remanufactured portion including a part of a second SiC formed by depositing SiC by a second CVD process on a surface of the base portion.   
     
     
         6 . The plasma processing apparatus of  claim 5 , wherein the first SiC is formed by depositing SiC around a core by the first CVD process, the core being a graphite member or a sintering material of SiC, and
 wherein the base portion is manufactured by machining the first SiC such that the base portion does not include the core.   
     
     
         7 . The plasma processing apparatus of  claim 5 , wherein there is no stepped portion at a boundary between the base portion and the remanufactured portion. 
     
     
         8 . The plasma processing apparatus of  claim 5 , wherein an erosion rate of the base portion is identical to an erosion rate of the remanufactured portion.