Device for jetting gas and solar cell manufacturing method using the same

Abstract

A device for disposing a gas, the device including: a chamber; a plurality of gas jetting plates disposed in the chamber, each gas jetting plate of the plurality of gas jetting plates including a plurality of gas jetting holes disposed on a surface thereof; and a gas pipe fluidly connected to the gas jetting plate and extending outside the chamber, wherein each gas jetting plate includes a first stage, which is fluidly connected to the gas pipe, and a final stage, which includes the plurality of gas jetting holes.

What is claimed is: 
     
         1 . A method for manufacturing a solar cell, the method comprising:
 forming a first electrode on a substrate;   forming a first metal layer comprising copper and gallium on the first electrode;   forming a second metal layer comprising indium on the first metal layer;   disposing the substrate comprising the first electrode, the first metal layer, and the second metal layer in a gas jetting device;   forming a P layer by jetting and heat treating hydrogen selenide onto the second metal layer;   forming an N layer on the P layer; and   forming a second electrode on the N layer to manufacture the solar cell,   wherein
 the substrate is supported by the gas jetting device, 
 the gas jetting device includes a first stage, which receives the hydrogen selenide from outside of the gas jetting device, and 
 a gas jetting plate of the gas jetting device comprises a gas jetting hole, which jets the hydrogen selenide onto the substrate. 
   
     
     
         2 . The method of  claim 1 , wherein a plurality of stages are further disposed between the first stage and a final stage. 
     
     
         3 . The method of  claim 2 , wherein the first stage and each stage between the first stage and the final stage comprises a gas moving hole. 
     
     
         4 . The method of  claim 3 , wherein:
 a number of the gas moving holes of the first stage and a number of gas moving holes of each stage between the first stage and the final stage increases from the first stage to the final stage.   
     
     
         5 . The method of  claim 4 , wherein the number of the gas jetting holes is more than the number of the gas moving holes on a stage adjacent to the final stage. 
     
     
         6 . The method of  claim 5 , wherein the gas jetting device further comprises:
 a body comprising the gas jetting plate,   a cover disposed on the body, which covers the gas jetting plate, and   the gas jetting plate is disposed in a vertical direction with respect to a surface of the body.   
     
     
         7 . The method of  claim 1 , wherein the heat treatment is performed at about 500 to about 600° C. 
     
     
         8 . The method of  claim 1 , wherein the first electrode comprises a reflective conductive metal. 
     
     
         9 . The method of  claim 1 , wherein the second electrode comprises a transparent conductive metal. 
     
     
         10 . A method for manufacturing a solar cell, the method comprising:
 forming a first electrode on a substrate;   forming a first metal layer comprising copper and gallium on the first electrode;   forming a second metal layer comprising indium on the first metal layer;   disposing the substrate comprising the first electrode, the first metal layer, and the second metal layer in a gas jetting device;   forming a P layer by jetting and heat treating hydrogen selenide onto the second metal layer;   forming an N layer on the P layer; and   forming a second electrode on the N layer to manufacture the solar cell,   wherein the gas jetting device includes
 a body, which supplies a gas, 
 a gas jetting unit disposed on the body and which jets the gas supplied from the body, and 
   wherein the gas jetting unit is disposed in a vertical direction with respect to a surface of the body.   
     
     
         11 . The method of  claim 10 , wherein the gas jetting unit includes a plurality of gas jetting pipes or a plurality of gas jetting plates. 
     
     
         12 . The method of  claim 11 , wherein each of the gas jetting pipes includes a plurality of gas jetting holes on a surface thereof. 
     
     
         13 . The method of  claim 12 , wherein a diameter of a gas jetting hole proximal to the body is less than a diameter of a gas jetting hole distal to the body in a vertical direction. 
     
     
         14 . The method of  claim 10 , wherein the heat treatment is performed at about 500 to about 600° C. 
     
     
         15 . The method of  claim 10 , wherein the first electrode comprises a reflective conductive metal. 
     
     
         16 . The method of  claim 10 , wherein the second electrode comprises a transparent conductive metal. 
     
     
         17 . The method of  claim 10 , wherein the gas jetting device further comprises a cover disposed on the body and which covers the gas jetting unit.