US2013267100A1PendingUtilityA1
Method of manufacturing semiconductor device, substrate processing apparatus and evaporation system
Est. expiryApr 6, 2032(~5.7 yrs left)· nominal 20-yr term from priority
H10P 14/00C23C 16/405C23C 16/4402C23C 16/4485C23C 16/45546H01L 21/02104
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Claims
Abstract
An amount of particles generated when a source material is used is suppressed. A substrate is loaded into a process chamber, and the source material is sequentially flowed into an evaporator, and a mist filter constituted by assembling a plurality of at least two types of plates including holes disposed at different positions to be evaporated and supplied into the process chamber to process the substrate, and then, the substrate is unloaded from the process chamber.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A method of manufacturing a semiconductor device, comprising:
(a) loading a substrate into a process chamber; (b) evaporating a source material by sequentially flowing the source to an evaporator and a mist filter comprising one or more first plates and one or more second plates; (c) supplying the source material evaporated in the step (b) into the process chamber to process the substrate; and (d) unloading the substrate from the process chamber, wherein each of the one or more first plates comprises one or more first holes, and each of the one or more second plates comprises one or more second holes disposed at different positions from those of the one or more first holes.
2 . The method of manufacturing the semiconductor device of claim 1 , wherein the one or more first holes are disposed near an outer circumference of each of the one or more first plates, the one or more second holes are disposed near a center of each of the one or more second plates, and the one or more first plates and the one or more second plates are alternately disposed, and
wherein the step (b) comprises evaporating the source material passed through the evaporator by alternately flowing the source material through the one or more first holes and the one or more second holes.
3 . The method of manufacturing the semiconductor device of claim 1 , wherein the step (b) comprises evaporating the source material sequentially flown through the evaporator and the mist filter by further flowing the source material through a gas filter.
4 . A substrate processing apparatus comprising:
a process chamber configured to accommodate a substrate; a process gas supply system configured to supply a process gas into the process chamber; and an exhaust system configured to exhaust the process chamber, wherein the process gas supply system comprises: an evaporator configured to receive a source material; and a mist filter disposed at a downstream side of the evaporator, and comprising one or more first plates and one or more second plates, wherein each of the one or more first plates comprises one or more first holes, and each of the one or more second plates comprises one or more second holes disposed at different positions from those of the one or more first holes.
5 . The substrate processing apparatus of claim 4 , wherein the one or more first holes are disposed near an outer circumference of each of the one or more first plates, the one or more second holes are disposed near a center of each of the one or more second plates, and the one or more first plates and the one or more second plates are alternately disposed.
6 . The substrate processing apparatus of claim 4 , wherein the process gas supply system further comprises a gas filter disposed at a downstream side of the mist filter.
7 . The substrate processing apparatus of claim 6 , wherein the evaporator, the mist filter and the gas filter are separate from one another.
8 . The substrate processing apparatus of claim 4 , wherein the mist filter further comprises a heater configured to heat the one or more first plates and the one or more second plates.
9 . The substrate processing apparatus of claim 4 , wherein each of the one or more first plates and the one or more second plates comprises a metal.
10 . The substrate processing apparatus of claim 4 , wherein a shape of each of the one or more first plates is same as that of each of the one or more second plates except for the one or more first holes and the one or more second holes.
11 . The substrate processing apparatus of claim 4 , wherein each of the one or more first plates and the one or more second plates comprises a plate section comprising one of the one or more first holes and the one or more second holes; and an outer circumferential section disposed at an outer circumference of the plate section, the outer circumferential section being thicker than the plate section, and
the outer circumferential section of one of the one or more first plates is in contact with the outer circumferential section of one of the one or more second plates adjacent to the outer circumferential section of the one of the one or more first plates in a manner that a space is provided between the plate section of the one of the one or more first plates and the plate section of the one of the one or more second plates.
12 . The substrate processing apparatus of claim 11 , wherein a stepped portion is provided between a side surface of the outer circumferential section and a side surface of the plate section.
13 . The substrate processing apparatus of claim 4 , wherein a sintered metal is filled between the one or more first plates and the one or more second plates.
14 . An evaporation system comprising:
an evaporator configured to receive a source material; and a mist filter disposed at a downstream side of the evaporator and comprising one or more first plates and one or more second plates, wherein each of the one or more first plates comprises one or more first holes, and each of the one or more second plates comprises one or more second holes disposed at different positions from those of the one or more first holes.
15 . The evaporation system of claim 14 , wherein the one or more first holes are disposed near an outer circumference of each of the one or more first plates, the one or more second holes are disposed near a center of each of the one or more second plates, and the one or more first plates and the one or more second plates are alternately disposed.
16 . The evaporation system of claim 15 , further comprising a gas filter disposed at a downstream side of the mist filter.
17 . The evaporation system of claim 16 , wherein the evaporator, the mist filter and the gas filter are separate from one another.
18 . The evaporation system of claim 14 , wherein the mist filter further comprises a heater configured to heat the one or more first plates and the one or more second plates.Join the waitlist — get patent alerts
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