Sensor comprising at least a vertical double junction photodiode, being integrated on a semiconductor substrate and corresponding integration process

Abstract

An embodiment relates to a sensor being integrated on a semiconductor substrate and comprising at least a vertical double-junction photodiode, in turn comprising at least one first and one second p-n junction formed in said semiconductor substrate, as well as at least an anti-reflection coating formed on said photodiode. Said at least one anti-reflection coating comprises at least one first and one second different anti-reflection layer being suitable to obtain a responsivity peak in correspondence with a predetermined wavelength of an incident optical signal on said sensor. An embodiment also relates to an integration process of such a sensor, as well as to an ambient light sensor made by means of such a sensor.

1 - 34 . (canceled) 
     
     
         35 . A method, comprising:
 receiving a wavelength of electromagnetic radiation through a first material having a first thickness approximately equal to one fourth of the wavelength and through a second material having a second thickness approximately equal to one half of the wavelength; and   generating a first current across a first p-n junction in response to the received wavelength; and   generating a second current across a second p-n junction in response to the received wavelength.   
     
     
         36 . The method of  claim 35  wherein the first p-n junction is disposed over the second p-n junction. 
     
     
         37 . The method of  claim 35  wherein the first material is disposed over the second material. 
     
     
         38 . The method of  claim 35 , further comprising combining the first and second currents. 
     
     
         39 . The method of  claim 35 , further comprising summing the first and second currents. 
     
     
         40 . The method of  claim 35 , further comprising subtracting one of the first and second currents from the other of the first and second currents. 
     
     
         41 . The method of  claim 35 , further comprising adjusting a brightness of an apparatus in response to at least one of the first and second currents. 
     
     
         42 . A method, comprising:
 receiving electromagnetic radiation at a first junction and at a second junction disposed under the first junction;   generating a first signal having a first magnitude corresponding to the electromagnetic radiation received at the first junction; and   generating a second signal having a different magnitude corresponding to the electromagnetic radiation received at the second junction.   
     
     
         43 . The method of  claim 42 , further comprising combining the first and second signals. 
     
     
         44 . The method of  claim 42 , further comprising summing the first and second signals. 
     
     
         45 . The method of  claim 42 , further comprising subtracting one of the first and second signals from the other of the first and second signals.