Semiconductor Device and Method of Forming Protective Coating Material Over Semiconductor Wafer to Reduce Lamination Tape Residue

Abstract

A semiconductor device has a build-up interconnect structure formed over an active surface of a semiconductor wafer containing a plurality of semiconductor die separated by a saw street. An insulating layer is formed over the interconnect structure. Bumps are formed over the interconnect structure. A protective coating material is deposited over the insulating layer and saw street. A lamination tape is applied over the coating material. A portion of a back surface of the semiconductor wafer is removed. A mounting tape is applied over the back surface. The lamination tape is removed while leaving the coating material over the insulating layer and saw street. A first channel is formed through the saw street extending partially through the semiconductor wafer. The coating material is removed after forming the first channel. A second channel is formed through the saw street and the mounting tape is removed to singulate the semiconductor wafer.

What is claimed: 
     
         1 . A semiconductor device, comprising:
 a semiconductor wafer;   an interconnect structure formed over a first surface of the semiconductor wafer;   an insulating layer formed over the interconnect structure; and   a protective material deposited over the interconnect structure and insulating layer.   
     
     
         2 . The semiconductor device of  claim 1 , further including a channel extending partially through the semiconductor wafer. 
     
     
         3 . The semiconductor device of  claim 2 , wherein the channel is formed through the semiconductor wafer using a laser. 
     
     
         4 . The semiconductor device of  claim 1 , wherein the protective material includes a water-soluble material. 
     
     
         5 . The semiconductor device of  claim 1 , further including a plurality of bumps formed over the interconnect structure. 
     
     
         6 . The semiconductor device of  claim 1 , further including a lamination tape applied over the protective material. 
     
     
         7 . A semiconductor device, comprising:
 a semiconductor wafer;   a protective material deposited over a first surface of the semiconductor wafer; and   a first lamination tape applied over the protective material.   
     
     
         8 . The semiconductor device of  claim 7 , further including a first channel extending partially through the semiconductor wafer. 
     
     
         9 . The semiconductor device of  claim 8 , further including a second channel extending completely through the semiconductor wafer. 
     
     
         10 . The semiconductor device of  claim 7 , wherein the protective material includes a water-soluble material. 
     
     
         11 . The semiconductor device of  claim 7 , further including an interconnect structure formed over the first surface of the semiconductor wafer. 
     
     
         12 . The semiconductor device of  claim 11 , further including a plurality of bumps formed over the interconnect structure. 
     
     
         13 . The semiconductor device of  claim 7 , further including a second lamination tape applied over a second surface of the semiconductor wafer opposite the first surface of the semiconductor wafer. 
     
     
         14 . A semiconductor device, comprising:
 a semiconductor die;   an interconnect structure formed over a first surface of the semiconductor die; and   a protective material deposited over the interconnect structure.   
     
     
         15 . The semiconductor device of  claim 14 , further including a first channel extending partially through the semiconductor wafer. 
     
     
         16 . The semiconductor device of  claim 15 , further including a second channel extending completely through the semiconductor wafer. 
     
     
         17 . The semiconductor device of  claim 15 , wherein the first channel is formed through the semiconductor die using a laser. 
     
     
         18 . The semiconductor device of  claim 14 , wherein the protective material includes a water-soluble material. 
     
     
         19 . The semiconductor device of  claim 14 , further including a plurality of bumps formed over the interconnect structure. 
     
     
         20 . The semiconductor device of  claim 14 , further including a lamination tape applied over the protective material. 
     
     
         21 . A semiconductor device, comprising:
 a semiconductor die;   a protective material deposited over a first surface of the semiconductor die; and   a first lamination tape applied over the protective material.   
     
     
         22 . The semiconductor device of  claim 21 , further including a channel extending partially through the semiconductor die. 
     
     
         23 . The semiconductor device of  claim 21 , wherein the protective material includes a water-soluble material. 
     
     
         24 . The semiconductor device of  claim 21 , further including an interconnect structure formed over the first surface of the semiconductor die. 
     
     
         25 . The semiconductor device of  claim 21 , further including a second lamination tape applied over a second surface of the semiconductor die opposite the first surface of the semiconductor die.