Display substrate and method of manufacturing the same

Abstract

A display substrate includes a transistor, a black matrix and a color spacer. The transistor is connected to a gate line, and a data line crossing the gate line. The black matrix includes a first light-blocking portion covering the gate line and the data line, and a second light-blocking portion covering a channel of the transistor. The second light-blocking portion has a thickness which is smaller than a thickness of the first light-blocking portion. The color spacer is disposed on the second light-blocking portion.

What is claimed is: 
     
         1 . A method of manufacturing a display substrate, the method comprising:
 forming a transistor connected to a gate line, and a data line crossing the gate line, on a base substrate;   forming a black matrix comprising a first light-blocking portion overlapping the gate line and the data line, and a second light-blocking portion overlapping a channel of the transistor, the second light-blocking portion having a thickness which is smaller than a thickness of the first light-blocking portion; and   forming a color light-blocking member disposed overlapping the second light-blocking portion.   
     
     
         2 . The method of  claim 1 , wherein the forming a black matrix comprises:
 forming a light-blocking layer on the base substrate in which the transistor is formed; and   forming the first light-blocking portion, and the second light-blocking portion which has the smaller thickness than that of the first light-blocking portion, by using the light-blocking layer as a slit mask or a half-tone mask.   
     
     
         3 . The method of  claim 1 , wherein the thickness of the first light-blocking portion corresponds to an optical density blocking lights. 
     
     
         4 . The method of  claim 3 , wherein the thickness of the second light-blocking portion is identifiable through an infrared light illuminator. 
     
     
         5 . The method of  claim 1 , wherein the thickness of the first light-blocking portion is about 1.8 micrometers (μm) to about 2.2 micrometers (μm), and an optical density of the first light-blocking portion is about 3.6 to about 4.4. 
     
     
         6 . The method of  claim 5 , wherein the thickness of the second light-blocking portion is about 1.0 μm to about 1.3 μm, and an optical density of the second light-blocking portion is about 2.0 to about 2.6. 
     
     
         7 . The method of  claim 1 , further comprising:
 forming a color filter on a light-transmitting area of the base substrate, the light-transmitting area defined by the black matrix;   forming an organic insulation layer on the base substrate on which the black matrix and the color filter are formed; and   forming a pixel electrode electrically connected to the transistor disposed on the base substrate on which the organic insulation layer is formed.   
     
     
         8 . The method of  claim 7 , further comprising:
 applying test signals to the gate line and the data line of the base substrate on which the pixel electrode is formed, to detect a defect pixel; and   identifying the second light-blocking portion corresponding to the defect pixel, using an infrared light illuminator, to repair a channel of the defect pixel in a repair process.   
     
     
         9 . The method of  claim 8 , wherein the forming the color light-blocking member comprises:
 forming a color organic layer on the base substrate after the repair process of the channel is completed; and   forming a color spacer, and a color light-blocking portion having a height smaller than a height of the color spacer, by disposing a slit mask or a half tone mask on the color organic layer.   
     
     
         10 . The method of  claim 9 , wherein a total sum of an optical density of the second light-blocking portion and an optical density of the color light-blocking portion is a total optical density capable of blocking lights. 
     
     
         11 . The method of  claim 9 , wherein an optical density of the color light-blocking portion is about 2.0 to about 4.0.