Semiconductor device having analog transistor with improved operating and flicker noise characteristics and method of making same

Abstract

A semiconductor device with improved transistor operating and flicker noise characteristics includes a substrate, an analog NMOS transistor and a compressively-strained-channel analog PMOS transistor disposed on the substrate. The device also includes a first etch stop liner (ESL) and a second ESL which respectively cover the NMOS transistor and the PMOS transistor. The relative measurement of flicker noise power of the NMOS and PMOS transistors to flicker noise power of reference unstrained-channel analog NMOS and PMOS transistors at a frequency of 500 Hz is less than 1.

What is claimed is: 
     
         1 . A semiconductor device comprising:
 a substrate including a strained-channel analog NMOS transistor and a strained-channel analog PMOS transistor;   a first etch stop liner (ESL) which extends over a top surface of the substrate and has a hydrogen concentration of less than 1×10 21 /cm 3 ; and   a gate of the strained-channel analog NMOS transistor disposed between the first ESL and the substrate,   wherein a gate of the strained-channel analog PMOS transistor is disposed between the first ESL and the substrate.