Film-forming apparatus for the formation of silicon carbide and film-forming method for the formation of silicon carbide

Abstract

A film-forming apparatus and method for the formation of silicon carbide comprising, a film-forming chamber to which a reaction gas is supplied, a temperature-measuring unit which measures a temperature within the chamber, a plurality of heating units arranged inside the chamber, an output control unit which independently controls outputs of the plurality of heating units, a substrate-transferring unit which transfers a substrate into, and out of the chamber, wherein the output control unit turns off or lowers at least one output of the plurality of heating units when the film forming process is completed, when the temperature measured by the temperature-measuring unit reaches a temperature at which the substrate-transferring unit is operable within the chamber, then at least one output of the plurality of heating units turned off or lowered, is turned on or raised, and the substrate is transferred out of the film-forming chamber by the substrate-transferring unit.

What is claimed is: 
     
         1 . A film-forming apparatus for the formation of silicon carbide comprising:
 a film-forming chamber to which a reaction gas is supplied, where a film forming process is performed;   a temperature-measuring unit which measures a temperature within the film-forming chamber;   a plurality of heating units which are arranged inside the film-forming chamber;   an output control unit which controls respective outputs of the plurality of heating units independently;   a substrate-transferring unit which transfers a substrate to which a film forming process of silicon carbide is performed into, and out of the chamber; and   a susceptor on which the substrate is placed, the susceptor being disposed within the film-forming chamber, wherein   the output control unit turns off or lowers at least one output of the plurality of heating units when the film forming process to the substrate is completed,   when the temperature measured by the temperature-measuring unit reaches a temperature at which the substrate-transferring unit is operable within the film-forming chamber, then at least one output of the plurality of heating units which has been turned off or lowered, is turned on or raised, and   the substrate to which the film forming process has been performed is transferred out of the film-forming chamber by the substrate-transferring unit.   
     
     
         2 . The film-forming apparatus for the formation of silicon carbide according to  claim 1 , wherein
 the plurality of heating units has a first heating unit arranged below the susceptor and a second heating unit arranged above the susceptor; and   the output control unit turns off or lowers the output of the first heating unit when the film forming process to the substrate is completed.   
     
     
         3 . The film-forming apparatus for the formation of silicon carbide according to  claim 1 , wherein
 the plurality of heating units has a first heating unit arranged below the susceptor and   a second heating unit arranged above the susceptor and composed of a plurality of heating units disposed in a vertical direction; and   the output control unit turns off or lowers the output of at least one of the plurality of heating units constituting the second heating unit when the film forming process to the substrate is completed.   
     
     
         4 . The film-forming apparatus for the formation of silicon carbide according to  claim 3 , wherein
 the output control unit turns off or lowers the output of a heating unit of the plurality of heating units constituting the second heating unit, which is positioned nearest to the substrate when the film forming process to the substrate is completed.   
     
     
         5 . The film-forming apparatus for the formation of silicon carbide according to  claim 3 , wherein
 when the temperature measured by the temperature-measuring unit reaches the temperature at which the substrate-transferring unit is operable within the film-forming chamber, the output control unit turns on or raises the output of a heating unit of the plurality of heating units constituting the second heating unit, which is positioned farthest from the substrate, and   the substrate to which the film forming process has been performed is transferred out of the film-forming chamber by the substrate-transferring unit.   
     
     
         6 . The film-forming apparatus for the formation of silicon carbide according to  claim 1 , further comprising a sensor which senses that the substrate to which the film forming process has been performed has been transferred out of the film-forming chamber, wherein
 the output control unit receives a signal from the sensor to control the respective outputs of the plurality of heating units independently.   
     
     
         7 . The film-forming apparatus for the formation of silicon carbide according to  claim 1 , wherein
 the reaction gas contains at least one selected from the group consisting of monosilane, dichlorosilane, trichlorosilane, and silicone tetrachloride and at least one selected from the group consisting of propane and ethylene.   
     
     
         8 . A film-forming method for the formation of silicon carbide, wherein,
 a reaction gas is supplied into a film-forming chamber and a film of silicon carbide is formed on a substrate while the substrate is being heated by a plurality of heating units;   after the formation of a silicon carbide on a substrate, at least one output of the plurality of heating units is turned off or lowered;   when the temperature within the film-forming chamber reaches T 1  or lower, at least one output of the plurality of heating units which has been turned off or lowered, is turned on or raised, and a substrate-transferring unit then enters the film-forming chamber;   when the temperature within the film-forming chamber reaches T 2  (incidentally, T 1 >T 2 ) or lower, the substrate is transferred out of the film-forming chamber by the substrate-transferring unit; and   another substrate is then transferred into the film-forming chamber by the substrate-transferring unit and the outputs of the remaining heating units are turned on or raised.   
     
     
         9 . The film-forming method for the formation of silicon carbide according to  claim 8 , wherein
 the plurality of heating units has a first heating unit arranged below a susceptor on which the substrate is placed, and   a second heating unit arranged above the susceptor, and   when a film forming process to the substrate is completed, the output of the first heating unit is turned off or lowered.   
     
     
         10 . The film-forming method for the formation of silicon carbide according to  claim 8 , wherein
 the plurality of heating units has a first heating unit arranged below a susceptor on which the substrate is placed, and   a second heating unit arranged above the susceptor and is composed of a plurality of heating units disposed in a vertical direction, and   when a film forming process to the substrate is completed, at least one output of the plurality of heating units constituting the second heating unit is turned off or lowered.   
     
     
         11 . The film-forming method for the formation of silicon carbide according to  claim 10 , wherein
 when a film forming process to the substrate is completed, an output of a heating unit of the plurality of heating units constituting the second heating unit, which is positioned nearest to the substrate, is turned off or lowered.   
     
     
         12 . The film-forming method for the formation of silicon carbide according to  claim 10 , wherein
 when the temperature within the film-forming chamber reaches T 2  or lower, an output of a heating unit of the heating units constituting the second heating unit, which is positioned farthest from the substrate, is turned on or raised, and   the substrate to which the film forming process has been performed is transferred out of the film-forming chamber by the substrate-transferring unit.   
     
     
         13 . The film-forming method for the formation of silicon carbide according to  claim 8 , wherein
 all the outputs of the plurality of heating units are turned off or lowered, after a film of silicon carbide is formed on the substrate.   
     
     
         14 . The film-forming method for the formation of silicon carbide according to  claim 8 , wherein
 a sensor which senses the substrate transferring in or out of the film-forming chamber is used, and   when a signal from the sensor is received the outputs of the remaining heating units are turned on or raised.   
     
     
         15 . The film-forming method for the formation of silicon carbide according to  claim 8 , wherein
 the reaction gas contains at least one selected from the group consisting of monosilane, dichlorosilane, trichlorosilane, and silicone tetrachloride and at least one selected from the group consisting of propane and ethylene.