Composition And Method For Removing Photoresist And Bottom Anti-Reflective Coating For A Semiconductor Substrate

Abstract

A composition for removing photoresist and bottom anti-reflective coating from a semiconductor substrate is disclosed. The composition may comprise a nontoxic solvent, the nontoxic solvent having a flash point above 80 degrees Celsius and being capable of dissolving acrylic polymer and phenolic polymer. The composition may further comprise Tetramethylammonium Hydroxide (TMAH) mixed with the nontoxic solvent.

What is claimed is: 
     
         1 . A composition, comprising:
 a nontoxic solvent; and   Tetramethylammonium Hydroxide (TMAH) mixed with the nontoxic solvent;   wherein the nontoxic solvent has a flash point above 80 degrees Celsius; and   wherein the nontoxic solvent is capable of dissolving acrylic polymer and phenolic polymer.   
     
     
         2 . The composition of  claim 1 , wherein the relative concentrations of the TMAH and the nontoxic solvent result in a pH less than approximately 9. 
     
     
         3 . The composition of  claim 1 , wherein the nontoxic solvent is capable of dissolving acrylic polymer and phenolic polymer in about 1 minute at a temperature between about 20 and about 80 C. 
     
     
         4 . The composition of  claim 1 , wherein the concentration of the TMAH is selected to not attack refractory metals exposed to the nontoxic solvent for less than about 1 minute. 
     
     
         5 . The composition of  claim 1 , wherein the nontoxic solvent has high polarity and mixes well with water. 
     
     
         6 . The composition of  claim 1 , wherein the nontoxic solvent is N-(2-Hydroxyethyl)-2-Pyrrolidone. 
     
     
         7 . The composition of  claim 6 , wherein the TMAH mixed with the nontoxic solvent provides the composition a concentration of approximately 2.5% of TMAH by volume. 
     
     
         8 . The composition of  claim 1 , wherein the nontoxic solvent is Diethylene Glycol Monomethyl Ether. 
     
     
         9 . The composition of  claim 8 , wherein the TMAH mixed with the nontoxic solvent provides the composition a concentration of no more than approximately 2.5% of TMAH by volume. 
     
     
         10 . The composition of  claim 1 , wherein the nontoxic solvent is Dimethyl Sulfoxide. 
     
     
         11 . The composition of  claim 10 , wherein the TMAH mixed with the nontoxic solvent provides the composition a concentration of no more than approximately 2.5% of TMAH by volume. 
     
     
         12 . A composition, comprising:
 an organic solvent capable of dissolving acrylic polymer and phenolic polymer; and   Tetramethylammonium Hydroxide (TMAH) mixed with the organic solvent.   
     
     
         13 . The composition of  claim 12 , wherein the organic solvent is N-(2-Hydroxyethyl)-2-Pyrrolidone. 
     
     
         14 . The composition of  claim 13 , wherein the TMAH mixed with the organic solvent provides the composition a concentration of approximately 2.5% of TMAH by volume. 
     
     
         15 . The composition of  claim 12 , wherein the organic solvent is Diethylene Glycol Monomethyl Ether. 
     
     
         16 . The composition of  claim 15 , wherein the TMAH mixed with the organic solvent provides the composition a concentration of no more than approximately 2.5% of TMAH by volume. 
     
     
         17 . The composition of  claim 12 , wherein the organic solvent is Dimethyl Sulfoxide. 
     
     
         18 . The composition of  claim 17 , wherein the TMAH mixed with the organic solvent provides the composition a concentration of no more than approximately 2.5% of TMAH by volume. 
     
     
         19 . The composition of  claim 12 , wherein the TMAH mixed with the organic solvent provides the composition a pH less than about 9. 
     
     
         20 . The composition of  claim 12 , wherein an amount and concentration of the TMAH is optimized to selectively etch a bottom anti-reflective coating (BARC) but not to over-etch a gate metal or a high-k dielectric.