Magnetic storage apparatus

Abstract

According to one embodiment, there is provided a magnetic storage apparatus that includes a magnetic resistance effect element with a ferromagnetic storage layer and a ferromagnetic reference layer, and a selective transistor connected to the magnetic resistance effect element. The magnetic resistance effect element has a resistance varied in accordance with a magnetization state of the ferromagnetic storage layer. The selective transistor is connected to the magnetic resistance effect element. The gate electrode of the selective transistor at least has a portion formed of a ferromagnetic layer magnetized in a direction opposite to the direction of magnetization of the ferromagnetic reference layer.

What is claimed is: 
     
         1 . A magnetic storage apparatus comprising:
 a magnetic resistance effect element including a ferromagnetic storage layer and a ferromagnetic reference layer, the ferromagnetic storage layer having a direction of magnetization thereof varied by a spin polarized current, the ferromagnetic reference layer having a constant direction of magnetization, the magnetic resistance effect element having a resistance varied in accordance with a magnetization state of the ferromagnetic storage layer; and   a selective transistor connected to the magnetic resistance effect element, and having a gate electrode, the gate electrode at least having a portion formed of a ferromagnetic layer magnetized in a direction opposite to the direction of magnetization of the ferromagnetic reference layer.   
     
     
         2 . The apparatus according to  claim 1 , wherein the gate electrode is formed of a conductive ferromagnetic layer magnetized in a direction opposite to the direction of magnetization of the ferromagnetic reference layer. 
     
     
         3 . The apparatus according to  claim 1 , wherein the gate electrode has a laminated structure including a non-magnetic metal layer and a ferromagnetic layer, the ferromagnetic layer being magnetized in the direction opposite to the direction of magnetization of the ferromagnetic reference layer. 
     
     
         4 . The apparatus according to  claim 1 , wherein the magnetic resistance effect element is a magnetic tunnel junction element held between the ferromagnetic storage layer and the ferromagnetic reference layer with insulating layers interposed. 
     
     
         5 . The apparatus according to  claim 1 , wherein the magnetic resistance effect element is located near the selective transistor, and is connected to a drain area of the selective transistor via a contact connected to the drain area and a lead wire connected to the contact. 
     
     
         6 . The apparatus according to  claim 5 , further comprising an upper electrode provided on an upper surface of the magnetic resistance effect element, and a lower electrode provided on a lower surface of the magnetic resistance effect element, the lower electrode being connected to the lead wire. 
     
     
         7 . The apparatus according to  claim 1 , wherein the magnetic resistance effect element is located near the selective transistors, and is connected to the drain area of the selective transistor via a contact. 
     
     
         8 . The apparatus according to  claim 7 , further comprising an upper electrode provided on an upper surface of the magnetic resistance effect element, and a lower electrode provided on a lower surface of the magnetic resistance effect element, the lower electrode being connected to the contact. 
     
     
         9 . The apparatus according to  claim 1 , further comprising a shift adjusting layer used to reduce a leakage field leaking from the ferromagnetic reference layer to the ferromagnetic storage layer. 
     
     
         10 . The apparatus according to  claim 9 , wherein the ferromagnetic reference layer, the shift adjusting layer and the gate electrode are formed of an in-plane anisotropic magnetic material. 
     
     
         11 . The apparatus according to  claim 9 , wherein the ferromagnetic reference layer, the shift adjusting layer and the gate electrode are formed of a vertically anisotropic magnetic material. 
     
     
         12 . The apparatus according to  claim 1 , wherein the selective transistor is formed on a semiconductor substrate, and an interlayer insulating film is formed on the semiconductor substrate to cover the selective transistor, and the magnetic resistance effect element is formed on the interlayer insulating film. 
     
     
         13 . A magnetic storage apparatus comprising:
 a selective transistor formed on a semiconductor substrate, and including a gate electrode, a source area and a drain area;   an interlayer insulating film formed on the semiconductor substrate to cover the selective transistor;   a contact formed through the interlayer insulating film and connected to the drain area; and   a magnetic resistance effect element formed on the interlayer insulating film and connected to the contact, the magnetic resistance effect element including a ferromagnetic storage layer and ferromagnetic reference layer, the ferromagnetic storage layer having a direction of magnetization thereof varied by a spin polarized current, the ferromagnetic reference layer having a constant direction of magnetization, the magnetic resistance effect element having a resistance varied in accordance with a magnetization state of the ferromagnetic storage layer,   the gate electrode at least having a portion formed of a ferromagnetic layer magnetized in a direction opposite to the direction of magnetization of the ferromagnetic reference layer.   
     
     
         14 . The apparatus according to  claim 13 , wherein the gate electrode is formed of a conductive ferromagnetic layer magnetized in a direction opposite to the direction of magnetization of the ferromagnetic reference layer. 
     
     
         15 . The apparatus according to  claim 13 , wherein the gate electrode has a laminated structure including a non-magnetic metal layer and a ferromagnetic layer, the ferromagnetic layer being magnetized in the direction opposite to the direction of magnetization of the ferromagnetic reference layer. 
     
     
         16 . The apparatus according to  claim 13 , wherein the magnetic resistance effect element is a magnetic tunnel junction element formed by placing an insulation film between the ferromagnetic storage layer and the ferromagnetic reference layer. 
     
     
         17 . The apparatus according to  claim 13 , wherein the magnetic resistance effect element is located near the selective transistor, and is connected to a drain area of the selective transistor via a contact connected to the drain area and a lead wire connected to the contact. 
     
     
         18 . The apparatus according to  claim 13 , wherein the magnetic resistance effect element is located near the selective transistor, and is connected to a drain area of the selective transistor via a contact. 
     
     
         19 . The apparatus according to  claim 13 , further comprising a shift adjusting layer used to reduce a leakage field leaking from the ferromagnetic reference layer to the ferromagnetic storage layer.