Light emitting element package and method of manufacturing the same

Abstract

There is provided a light emitting element package including: a light emitting laminate having a structure in which semiconductor layers are laminated and having a first main surface and a second main surface opposing the first main surface; a terminal unit disposed on an electrode disposed on the second main surface; a molded unit disposed on the second main surface of the light emitting laminate and allowing a portion of the terminal unit to be exposed; and a wavelength conversion unit disposed on the first main surface of the light emitting laminate.

What is claimed is: 
     
         1 . A light emitting element package, comprising:
 a light emitting laminate having a structure in which semiconductor layers are laminated and having a first main surface and a second main surface opposing the first main surface;   a terminal unit disposed on at least one electrode disposed on the second main surface;   a molded unit disposed on the second main surface of the light emitting laminate and allowing a portion of the terminal unit to be exposed; and   a wavelength conversion unit disposed on the first main surface of the light emitting laminate.   
     
     
         2 . The light emitting element package of  claim 1 , wherein the molded unit has a height less than a height of the terminal unit such that a portion of the terminal unit is protruded from the molded unit to be exposed. 
     
     
         3 . The light emitting element package of  claim 1  or  2 , wherein the molded unit includes a filler and a white molding compound. 
     
     
         4 . The light emitting element package of  claim 3 , wherein the filler has one or more materials selected from the group consisting of SiO 2 , TiO 2 , and Al 2 O 3 . 
     
     
         5 . The light emitting element package of  claim 1 , wherein:
 the light emitting laminate has a lamination structure in which an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are laminated,   the at least one electrode is a plurality of electrodes connected to the n-type semiconductor layer and the p-type semiconductor layer, and   the electrodes connected to the n-type semiconductor layer and the p-type semiconductor layer are arranged in the same direction.   
     
     
         6 . The light emitting element package of  claim 1 , wherein the terminal unit includes a solder bump. 
     
     
         7 . The light emitting element package of  claim 1 , wherein the terminal unit includes:
 a metal pillar disposed on the electrode, and   at least one of a solder bump and a metal finish, disposed on the metal pillar.   
     
     
         8 . The light emitting element package of  claim 7 , wherein the metal pillar is embedded in the molded unit. 
     
     
         9 . A light emitting element package, comprising:
 a light emitting element having a first main surface, a second main surface opposing the first main surface, and a lateral surface connecting the first and second main surfaces;   a reflective unit covering the lateral surface of the light emitting element and at least a portion of the first main surface;   a wavelength conversion unit covering at least a portion of the second main surface of the light emitting element;   first and second connection electrodes disposed on the first main surface of the light emitting element and electrically connected to the light emitting element; and   first and second external electrodes disposed in positions farther from the light emitting element on the first main surface side of the light emitting element than the first and second connection electrodes, connected to the first and second connection electrodes, and disposed to be larger than the first and second connection electrodes to cover portions of the reflective unit.   
     
     
         10 . The light emitting element package of  claim 9 , wherein the light emitting element includes:
 a substrate,   a light emitting structure disposed on the substrate and having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially laminated therein, and   a first connection electrode and a second connection electrode, disposed on the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, respectively.   
     
     
         11 . The light emitting element package of  claim 9 , wherein the light emitting element includes:
 a substrate,   a light emitting structure disposed on the substrate and having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially laminated therein,   a first conductivity-type contact layer electrically connected to the first conductivity-type semiconductor layer between the substrate and the first conductivity-type semiconductor layer, and having a first connection electrode extending in a direction of the substrate so as to be exposed outwardly,   a second conductivity-type contact layer disposed between the substrate and the first conductivity-type contact layer and having a second connection electrode extending in the direction of the substrate so as to be exposed outwardly,   a conductive via extending from the second conductivity-type contact layer and connected to the second conductivity-type semiconductor layer through the first conductivity-type contact layer, the first conductivity-type semiconductor layer, and the active layer, and   an insulator electrically separating the second conductivity-type contact layer and the conductive via from the first conductivity-type contact layer, the first conductivity-type semiconductor layer, and the active layer.   
     
     
         12 . The light emitting element package of  claim 9 , wherein the reflective unit includes a mixture of a highly reflective material and a curing resin. 
     
     
         13 . The light emitting element package of  claim 12 , wherein the highly reflective material is at least one of TiO 2  and Al 2 O 3 . 
     
     
         14 . The light emitting element package of  claim 9 , wherein the first and second external electrodes have a width equal to 20% to 50% of a lower area of the light emitting element package. 
     
     
         15 . A light emitting device, comprising:
 a light emitting element package including a light emitting element having a first main surface, a second main surface opposing the first main surface, and a lateral surface connecting the first and second main surfaces;   a reflective unit covering the lateral surface of the light emitting element and at least a portion of the first main surface;   a wavelength conversion unit covering at least a portion of the second main surface of the light emitting element;   first and second connection electrodes disposed on the first main surface of the light emitting element and electrically connected to the light emitting element; and   first and second external electrodes disposed in positions farther from the light emitting element on the first main surface side of the light emitting element than the first and second connection electrodes, connected to the first and second connection electrodes, and extending in a lateral direction of the light emitting element to cover portions of the reflective unit; and   a wiring pattern configured to apply an electrical signal for driving the light emitting element,   wherein the light emitting element package is disposed on the wiring pattern such that the first and second external electrodes are electrically connected to the wiring pattern.