US2013240637A1PendingUtilityA1
Showerhead for cvd depositions
Est. expiryApr 19, 2030(~3.7 yrs left)· nominal 20-yr term from priority
H10P 14/69398H10P 14/00C23C 16/45565Y10T137/0318C23C 16/45574H01L 21/02104
51
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Claims
Abstract
A CVD showerhead that includes a circular inner showerhead and at least one outer ring showerhead. At least two process gas delivery tubes are coupled to each showerhead. Also, a dual showerhead that includes a circular inner showerhead and at least one outer ring showerhead where each showerhead is coupled to oxygen plus a gas mixture of lead, zirconium, and titanium organometallics. A method of depositing a CVD thin film on a wafer. Also, a method of depositing a PZT thin film on a wafer.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A process of depositing a CVD thin film, comprising:
supplying a non-reacting process gas mixture to a mixing chamber of a showerhead through a first process gas delivery tube; and supplying a reactant gas to said mixing chamber through a second process gas delivery tube.
2 . The process of claim 1 where said non-reacting process gas mixture is a mixture of a lead organometallic, a zirconium organometallic, and a titanium organometallic and where said reactant gas is oxygen.
3 . A process of depositing a CVD thin film, comprising:
supplying a non-reacting process gas mixture to a first chamber of a showerhead; and supplying a reactant gas to a second chamber of said showerhead.Join the waitlist — get patent alerts
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