US2013239404A1PendingUtilityA1
System and Method for Integrated Inductor
Est. expiryJan 12, 2030(~3.5 yrs left)· nominal 20-yr term from priority
H10W 90/756H10W 72/5525H10W 72/5363H10W 72/536H10W 20/497H01F 17/0006H01F 2017/048H05K 3/10H01F 41/046H01F 27/2804Y10T29/49155H01F 27/255H01F 17/04Y10T29/49075H01F 5/00H10D 84/00H10D 1/20H01L 28/10
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Claims
Abstract
In one embodiment, an inductor has a substrate, a conductor disposed above the substrate and a seamless ferromagnetic material surrounding at least a first portion of the conductor.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A method of manufacturing a circuit, the method comprising:
depositing a conductive line on a substrate; removing a portion of the substrate adjacent to at least a portion of the conductive line; and depositing a seamless magnetic material surrounding at least the portion of the conductive line.
2 . The method of claim 1 , further comprising forming the substrate, wherein forming the substrate comprises depositing a dummy layer on a first substrate layer before depositing the conductive line, wherein removing the portion of the substrate adjacent to at least the portion of the conductive line comprises removing at least a portion of the dummy layer underneath at least the portion of the conductive line.
3 . The method of claim 1 , wherein removing the portion of the substrate adjacent to at least the portion of the conductive line comprises etching a cavity into at least a portion of the substrate beneath at least the portion of the conductive line.
4 . The method of claim 1 , wherein depositing the conductive line on the substrate comprises depositing the conductive line inside the substrate.
5 . The method of claim 1 , wherein depositing the conductive line on the substrate comprises depositing the conductive line over the substrate.
6 . The method of claim 1 wherein removing the portion of the substrate comprises etching the portion of the substrate through the entire substrate.
7 . The method of claim 1 , further comprising forming a pad coupled to the conductive line.
8 . The method of claim 1 , wherein depositing the seamless magnetic material comprises depositing a magnetic mold material.
9 . The method of claim 8 , wherein depositing the magnetic mold material comprises injecting a polymer comprising magnetic particles around the conductive line.
10 . The method of claim 1 , wherein the circuit comprises an inductor.
11 . The method of claim 1 , wherein the depositing the seamless magnetic material comprises depositing magnetic particles.
12 . The method of claim 1 , wherein removing the portion of the substrate comprises:
etching a first portion of the substrate from a top side of the substrate; and grinding or etching a second portion of the substrate from a back side of the substrate.
13 . A method of forming an inductor, the method comprising:
providing a substrate; forming a conductive line on the substrate; etching a portion of the substrate adjacent to at least a portion of the conductive line; and forming a seamless magnetic material around at least the portion of the conductive line.
14 . The method of claim 13 , wherein the substrate comprises silicon.
15 . The method of claim 13 , wherein forming the conductive line comprises disposing copper on the substrate.
16 . The method of claim 13 , wherein forming the seamless magnetic material comprises:
forming a mold with a mold material comprising ferrite particles, forming the mold comprising using a mold tool having a cavity that defines outside dimensions of the seamless magnetic material.
17 . The method of claim 13 , wherein etching the portion of the substrate comprises etching the substrate beneath the conductive line.
18 . A method of forming an inductor comprising:
providing a substrate; forming a trench in the substrate; forming a conductor in the trench; forming a gap extending from a top surface of the substrate through a bottom surface of the substrate; and forming a seamless magnetic material surrounding at least a first portion of the conductor and filling the gap.
19 . The method of claim 18 , wherein forming the trench comprises forming a deep trench.
20 . The method of claim 18 , wherein the gap is disposed adjacent to a first side of the first portion of the conductor.Join the waitlist — get patent alerts
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