Method for manufacturing nonvolatile memory device

Abstract

According to one embodiment, a method is disclosed for manufacturing a nonvolatile memory device. The nonvolatile memory device includes a memory cell connected to a first interconnect and a second interconnect. The method can include forming a first electrode film on the first interconnect. The method can include forming a layer including a plurality of carbon nanotubes dispersed inside an insulator on the first electrode film. At least one carbon nanotube of the plurality of carbon nanotubes is exposed from a surface of the insulator. The method can include forming a second electrode film on the layer. In addition, the method can include forming a second interconnect on the second electrode film.

1 - 20 . (canceled) 
     
     
         21 . A method for manufacturing a nonvolatile memory device, the nonvolatile memory device including a memory cell connected to a first interconnect and a second interconnect, the method comprising:
 forming a first electrode film on the first interconnect;   forming a layer including a plurality of carbon nanotubes dispersed inside an insulator on the first electrode film;   heating a fluid including the plurality of carbon nanotubes after the fluid is placed on the first electrode film;   impregnating the insulator into the plurality of carbon nanotubes after placing the plurality of carbon nanotubes on the first electrode film;   removing the surface of the insulator to expose one portion of the at least one carbon nanotube of the plurality of carbon nanotubes;   forming a second electrode film on the layer; and   forming the second interconnect on the second electrode film.   
     
     
         22 . The method according to  claim 21 , wherein one portion of the at least one carbon nanotube of the plurality of carbon nanotubes exposed from the surface of the insulator is removed to make a thickness of the carbon nanotube from the surface of the insulator to be less than a thickness of the second electrode film in case that the thickness of the carbon nanotube from the surface of the insulator is not less than the thickness of the second electrode film prior to the forming of the layer. 
     
     
         23 . The method according to  claim 21 , wherein the at least one carbon nanotube of the plurality of carbon nanotubes is exposed from the surface of the insulator by removing the surface of the insulator in the case that the plurality of carbon nanotubes is covered with the insulator prior to the forming of the layer. 
     
     
         24 . The method according to  claim 21 , wherein one portion of the plurality of carbon nanotubes dispersed inside the insulator and the surface of the insulator are removed to make a height of the plurality of carbon nanotubes from a surface of the first electrode film to be substantially a same as a height of the insulator from the surface of the first electrode film in the case that the one portion of the plurality of carbon nanotubes is selectively exposed from the surface of the insulator prior to the forming of the layer. 
     
     
         25 . The method according to  claim 21 , wherein one portion of the carbon nanotube is caused to protrude from the surface of the insulator, and the second electrode film is formed on the insulator with the protruding one portion being inserted into the second electrode film. 
     
     
         26 . The method according to  claim 21 , wherein a gap is formed between the first electrode film and the second electrode film by removing the insulator. 
     
     
         27 . The method according to  claim 21 , wherein a surface of the second electrode film is planarized after the forming of the second electrode film on the layer. 
     
     
         28 . The method according to  claim 21 , wherein the layer exists between the first interconnect and the second interconnect crossing each other. 
     
     
         29 . The method according to  claim 21 , wherein one end of at least one carbon nanotube of the plurality of carbon nanotubes contacts the first electrode film and one other end is electrically connected to the second electrode film in the layer. 
     
     
         30 . The method according to  claim 21 , wherein a bent portion of the carbon nanotube contacts the first electrode film or the second electrode film. 
     
     
         31 . The method according to  claim 21 , wherein the carbon nanotube is a single-walled nanotube having a single layer. 
     
     
         32 . The method according to  claim 21 , wherein the carbon nanotube is a multi-walled nanotube having multiple layers. 
     
     
         33 . The method according to  claim 21  , wherein the insulator is at least one of silicon oxide (SiO 2 ), alumina (Al 2 O 3 ), silicon oxide-carbon (SiOC), magnesium oxide (MgO), an organic insulator, and polymethylsilsesquioxane (PMSQ). 
     
     
         34 . The method according to  claim 21 , wherein a solution is coated onto the first electrode film, the plurality of carbon nanotubes being dispersed in the solution. 
     
     
         35 . The method according to  claim 21 , wherein a specific gravity of the carbon nanotubes inside the fluid is greater than a specific gravity of a solvent of the fluid. 
     
     
         36 . The method according to  claim 21 , wherein a solvent of the fluid is silanol (Si(OH) 4 )-containing solvent or methylsilsesquioxane (MSQ)-containing solvent. 
     
     
         37 . The method according to  claim 21 , wherein the fluid is water or alcohol containing the plurality of carbon nanotubes and fine particles of the insulator.