US2013234323A1PendingUtilityA1

Semiconductor chip and manufacturing method thereof

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Assignee: ELPIDA MEMORY INCPriority: Mar 8, 2012Filed: Mar 4, 2013Published: Sep 12, 2013
Est. expiryMar 8, 2032(~5.6 yrs left)· nominal 20-yr term from priority
Inventors:Toru Miyazaki
H10W 90/736H10W 90/724H10W 90/722H10W 90/297H10W 90/00H10W 74/121H10W 74/117H10W 72/9415H10W 72/07236H10W 72/01271H10W 72/01257H10W 72/01235H10W 72/952H10W 72/944H10W 72/942H10W 72/877H10W 72/252H10W 72/248H10W 72/222H10W 72/221H10W 72/0198H10W 72/29H10W 72/20H10W 72/072H01L 24/11H01L 24/12
42
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Claims

Abstract

A semiconductor device comprising stacked substrates through a bump, the bump comprising a solder bump formed on a copper bump wherein the solder bump includes Zn.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A semiconductor device comprising:
 a first substrate; and   a second substrate stacked on the first substrate through a bump,   the bump comprising a solder bump formed on a copper bump formed over the second substrate;   wherein the solder bump includes Zn.   
     
     
         2 . The semiconductor device according to  claim 1 , further comprising;
 a through-electrode penetrating the second substrate, the bump being electrically connected with the through-electrode.   
     
     
         3 . The semiconductor device according to  claim 1 ,
 wherein a concentration of Zn in an upper portion of the solder bump is lower than a concentration of Zn in a lower portion of the solder bump, the lower portion of the solder bump is in contact with the copper bump.   
     
     
         4 . The semiconductor device according to  claim 1 ;
 wherein the solder bump includes 1 to 5% by weight of Zn.   
     
     
         5 . The semiconductor device according to  claim 1 ;
 wherein the solder bump further includes Bi   
     
     
         6 . The semiconductor device according to  claim 2 ;
 wherein the solder bump further includes Bi.   
     
     
         7 . The semiconductor device according to  claim 1 ;
 wherein the solder bump further includes Cu.   
     
     
         8 . The semiconductor device according to  claim 2 ;
 wherein the solder hump further includes Cu.   
     
     
         9 . The semiconductor device according to  claim 4 ;
 wherein the solde bump further includes Cu.   
     
     
         10 . A method of manufacturing a semiconductor device, the semiconductor device comprising a first substrate stacked on a second substrates through a bump, the bump comprising a solder bump formed on a copper hump formed over the first substrate, the method comprising:
 forming the copper bump over the first substrate;   forming a Sn/Zn alloy layer on the copper bump;   forming a Sn/Ag alloy layer on the Sn/Zn alloy; and   heating and reflowing the Sn/Zn alloy layer and the Sn/Ag alloy layer.   
     
     
         11 . The method according to  claim 10 ;
 wherein the first substrate has a through-electrode penetrating the first substrate, and the bump is electrically connected with the through-electrode.   
     
     
         12 . The method according to  claim 10 ;
 wherein the Sn/Zn alloy includes 1 to 5% by weight of Zn.   
     
     
         13 . The method according to  claim 10 ;
 wherein the Sn/Zn alloy layer and/or the Sn/Ag alloy layer further includes Bi.   
     
     
         14 . The method according to  claim 11 ;
 wherein the Sn/Zn alloy layer and/or the Sn/Ag alloy layer further includes Bi.   
     
     
         15 . The method according to  claim 12 ;
 wherein the Sn/Zn alloy layer and/or the Sn/Ag alloy layer further includes Bi.   
     
     
         16 . The method according to  claim 10 ;
 wherein the Sn/Zn alloy layer and/or the Sn/Ag alloy layer further includes Cu.   
     
     
         17 . The method according to  claim 11 ;
 wherein the Sn/Zn alloy layer and/or the Sn/Ag alloy layer further includes Cu.   
     
     
         18 . The method according to  claim 12 ;
 wherein the Sn/Zn alloy layer and/or the Sn/Ag alloy layer further includes Cu.

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