US2013230447A1PendingUtilityA1

Gallium nitride substrate and optical device using the same

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Assignee: HITACHI CABLEPriority: Mar 2, 2012Filed: Feb 28, 2013Published: Sep 5, 2013
Est. expiryMar 2, 2032(~5.6 yrs left)· nominal 20-yr term from priority
Inventors:Shunsuke Yamamoto
H10P 74/203H10P 70/20H10P 50/646H10P 52/402H01S 5/32341H01S 5/0206C01B 21/0632C30B 29/406C30B 25/00G01N 23/2252H10D 62/8503H10H 20/825H10H 20/0137
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Claims

Abstract

A gallium nitride substrate that a GaLα/CKα peak intensity ratio in EDX spectrum is not less than 2. The EDX spectrum is obtained in energy dispersive X-ray microanalysis (EDX) of a surface of the gallium nitride substrate using a scanning electron microscope (SEM) at an accelerating voltage of 3 kV.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A gallium nitride substrate, wherein a GaLα/CKα peak intensity ratio in EDX spectrum is not less than 2, the EDX spectrum being obtained in energy dispersive X-ray microanalysis (EDX) of a surface of the gallium nitride substrate using a scanning electron microscope (SEM) at an accelerating voltage of 3 kV. 
     
     
         2 . The gallium nitride substrate according to  claim 1 , wherein the GaLα/CKα peak intensity ratio in the EDX spectrum is not less than 3. 
     
     
         3 . An optical device, comprising:
 a device structure formed on the gallium nitride substrate according to  claim 1 .   
     
     
         4 . The optical device according to  claim 3 , wherein the GaLα/CKα peak intensity ratio in the EDX spectrum is not less than 3.

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