Semiconductor apparatus manufacturing method and semiconductor apparatus

Abstract

There is provided a method of manufacturing the semiconductor apparatus, including: forming through-hole which penetrates a semiconductor substrate at a point that corresponds to a location of an electrode pad; forming an insulating film on a rear surface of the semiconductor substrate, including the interior of the through-hole; forming an adhesion securing layer from a metal or an inorganic insulator on a surface of the insulating film at least in an opening portion of the through-hole; forming a resist layer to serve as a mask in bottom etching on the adhesion securing layer; performing bottom etching to expose the electrode pad; removing the resist layer to obtain the insulating film free of surface irregularities that would otherwise have been created by bottom etching; forming a barrier layer, a seed layer, and a conductive layer by a low-temperature process; and performing patterning.

What is claimed is: 
     
         1 . A semiconductor apparatus, comprising:
 a semiconductor substrate;   an electrode pad formed on a front surface of said semiconductor substrate;   a through-hole which has an opening portion on a rear surface of said semiconductor substrate that corresponds to a location of said electrode pad and which penetrates said semiconductor substrate;   an insulating film formed on an inner wall of said through-hole;   a layer formed on said insulating film; and   a conductive layer formed on said layer, or on said layer and said insulating film, and on said electrode pad,   wherein said electrode pad is in contact with said conductive layer.   
     
     
         2 . The semiconductor apparatus according to  claim 1 , wherein said layer formed on said insulating film is made from one of a metal and an inorganic insulator. 
     
     
         3 . The semiconductor apparatus according to  claim 1 , wherein said layer formed on the insulating film is 0.01 μm to 0.1 μm in thickness. 
     
     
         4 . The semiconductor apparatus according to  claim 1 , wherein said layer formed on said insulating film comprises titanium, tungsten or chromium. 
     
     
         5 . The semiconductor apparatus according to  claim 1 , wherein said insulating film is formed of a material selected from the group consisting of parylene, polyimide resin, maleimide resin, polyamide resin, polyimide-amide resin, polyester resin, polyether resin, bisphenol resin, modified epoxy resin, modified acrylic resin, silicon resin, fluorocarbon resin, and melamine resin. 
     
     
         6 . The semiconductor apparatus according to  claim 1 , wherein said conductive layer comprises titanium, chromium, tungsten, titanium tungsten (TiW), titanium nitride (TiN), tantalum nitride (TaN) or gold.