Inspection method for semiconductor wafer and apparatus for reviewing defects

Abstract

An object of the present invention is to provide a suitable method of observing a wafer edge by using an electron microscope. The electron microscope includes a column which can take an image in being tilted, and thus allows a wafer edge to be observed from an oblique direction.

6 - 19 . (canceled) 
     
     
         20 . A review apparatus having a function to obtain a scanning electron microscope image of a semiconductor wafer according to a recipe in which an observation process is recorded or given position information, comprising:
 a sample stage that holds the semiconductor wafer; and   a tiltable column comprising an electron optical system that irradiates the semiconductor wafer with an electron beam and a detector that detects secondary electrons or reflection electrons obtained by irradiation with the electron beam, wherein   a viewing field of the column is moved by the sample stage to a position on an edge of the semiconductor wafer determined by the recipe or the position information, and   the edge of the semiconductor wafer is irradiated with the electron beam while the column is tilted, thereby imaging the scanning electron microscope image.   
     
     
         21 . The review apparatus according to  claim 20 , wherein the sample stage is a rotatable stage. 
     
     
         22 . The review apparatus according to  claim 20 , which is capable of imaging the scanning electron microscope image in a case in which the semiconductor wafer is irradiated with the electron beam from a direction tilted from the direction normal to the semiconductor wafer and in a case in which the semiconductor wafer is irradiated with the electron beam from a vertically upper position of the semiconductor wafer. 
     
     
         23 . The review apparatus according to  claim 20 , further comprising a monitor that displays a screen for providing the position information. 
     
     
         24 . The review apparatus according to  claim 20 , further comprising a monitor that displays a screen for providing the position information, wherein
 a graphic showing the outer periphery of the semiconductor wafer is displayed on a screen for providing the position information, thereby allowing a user of the apparatus to designate a position for imaging the scanning electron microscope image on the graphic.   
     
     
         25 . The review apparatus according to  claim 20 , further comprising a stage control unit that controls movement of the sample stage according to the recipe or the position information. 
     
     
         26 . The review apparatus according to  claim 20 , further comprising an electron optical system control unit that controls irradiation of the electron beam while the column is tilted. 
     
     
         27 . The review apparatus according to  claim 20 , wherein
 the viewing field is automatically moved to a plurality of imaging positions on the edge of the semiconductor wafer for imaging.   
     
     
         28 . The review apparatus according to  claim 20 , wherein the position information is provided based on the inspection data output from an inspection apparatus for wafer edge inspection. 
     
     
         29 . The review apparatus according to  claim 20 , wherein the viewing field is moved to a position designated by a user of the apparatus for imaging the scanning electron microscope image. 
     
     
         30 . A review apparatus having a function to obtain a scanning electron microscope image of a semiconductor wafer according to a recipe in which an observation process is recorded or given position information, comprising:
 a sample stage that holds the semiconductor wafer; and   a tiltable column comprising an electron optical system that irradiates the semiconductor wafer with an electron beam and a detector that detects secondary electrons or reflection electrons obtained by irradiation with the electron beam, wherein   a viewing field of the column is moved by the sample stage to a position on an edge of the semiconductor wafer determined by the recipe or the position information, and   the edge of the semiconductor wafer is irradiated with an electron beam at an angle at which a particle or defect on the edge of the semiconductor wafer is observed from the front side of the imaging viewing field, thereby imaging a scanning electron microscope image of the particle or defect.   
     
     
         31 . A review apparatus for obtaining a scanning electron microscope image of a semiconductor wafer, comprising:
 a sample stage capable of moving and rotating the semiconductor wafer;   a tiltable column comprising an electron optical system that irradiates the semiconductor wafer with an electron beam, a detector that detects secondary electrons or reflection electrons obtained by irradiation with the electron beam, and a detector that detects X-rays generated through irradiation with the electron beam, wherein   a viewing field of the column is moved to an edge of the semiconductor wafer by the sample stage, and   the edge of the semiconductor wafer is irradiated with the electron beam while the column is tilted.