Complex Alloy Electroplating Method

Abstract

One embodiment is for the close agitation of electroplating solution substantially near an electrode in an electroplating cell. The agitation occurs within the Nernst diffusion layer allowing for ion replenishment of the electroplating solution at the working electrode face. The system operates by producing a flat agitation face ( 180 ) and a working electrode ( 350 ) face that are brought to within 10 microns of one another during the plating process whilst the agitator 380 is being actuated. In one embodiment, the working electrode is rigid such as a semiconductor wafer. In another embodiment, the working electrode is a flexible material ( 600 ) such as fabric or flexible electronics. Other embodiments are described and shown.

1 . A method of electroplating complex alloys comprising:
 providing an agitator with an agitation plane of predetermined flatness;   providing an agitator carriage oriented parallel to said agitation plane to within a predetermined parallelness;   providing a rail system oriented parallel to said agitator carriage to within a predetermined parallelness;   providing an electroplating chamber configured to contain said agitator;   providing a chuck with a face of predetermined flatness and sprung onto a plurality of actuators with predetermined positioning precision:   whereby it is possible to position said face of said chuck relative to said agitation plane to within a predetermined accuracy in parallelness.   
     
     
         2 . A device for electroplating complex alloys comprising:
 an agitator with an agitation plane of predetermined flatness;   an agitator carriage oriented parallel to said agitation plane to within predetermined parallelness;   a rail system positioned substantially parallel to said agitator carriage;   an electroplating chamber containing said agitator;   a chuck with a face of predetermined flatness and sprung onto a plurality of actuators with predetermined positioning accuracy:   whereby it is possible to position said face of said chuck relative to said agitator plane to within a predetermined parallelness.   
     
     
         3 . The method of  claim 1 , wherein the position of said face of said chuck can be held substantially parallel to said agitator plane and within a relative separation of 5 microns. 
     
     
         4 . The method of  claim 1 , wherein the position of said face of said chuck can be held substantially parallel to said agitator plane and within a relative separation of more than 5 microns and less than 200 microns. 
     
     
         5 . The method of  claim 1  further comprising:
 providing a shim sandwiched between said working electrode and said agitator; 
 adjusting the micrometers on the electroplater while using the shim as a guide; 
 whereby a predetermined offset between the plane of the working electrode and said agitation plane can be set. 
 
     
     
         6 . The method of  claim 1  further comprising:
 providing a plurality of electrodes with faces machined substantially flat; 
 mounting said electrodes on said agitator such that the faces of said electrodes are substantially parallel to the plane of agitation; 
 measuring the resistance of the plating solution between the electrode and the working electrode; 
 whereby the offset of the working electrode in relation to the plane of the agitator can be determined. 
 
     
     
         7 . The method of  claim 1  wherein said chuck can hold and electrically connect to the wafer; whereby complex alloys can be homogenously deposited on the wafer as the solution on the wafer face is agitated within the Nernst diffusion layer. 
     
     
         8 . A method for electroplating complex alloys on reels of fabric or flexible electronics materials comprising:
 providing an agitator with an agitation plane of predetermined flatness;   providing an agitator carriage oriented parallel to said agitation plane to within a predetermined parallelness;   providing a rail system oriented parallel to said agitator carriage to within a predetermined parallelness;   providing an electroplating chamber;   providing a fabric or flexible electronics substrate with a pre-deposited conducting layer;   providing a customized chuck that allows said fabric or flexible electronics substrate to be fed over said customized chuck face so that said fabric is held parallel to the plane of agitation;   providing electrical connection to said fabric or flexible electronics substrate such that it becomes the working electrode;   whereby complex alloys can be homogenously deposited on said fabric or flexible electronics as the solution on the working electrode face is agitated within the Nernst diffusion layer.   
     
     
         9 . A method of electroplating complex alloys comprising:
 providing a working electrode;   providing an agitator with a plurality of blades;   providing a chuck to hold the working electrode such that the relative separation of the edges of said blades from said working electrode is maintained within 5 microns;   whereby agitation is achieved within the Nernst diffusion layer of said working electrode.   
     
     
         10 . The method of  claim 9 ,
 wherein the relative separation of the edges of said blades from said working electrode is maintained between 5 microns and 200 microns;   whereby agitation is achieved within the Nernst diffusion layer of said working electrode.   
     
     
         11 . The method of  claim 9 ,
 wherein the working electrode is fabric or flexible electronics.   
     
     
         12 . The method of  claim 9 , wherein the complex alloy material is superconducting. 
     
     
         13 . The method of  claim 9 , wherein the working electrode material is superconducting.