Method and Apparatus for Manufacturing Semiconductor Device

Abstract

According to one embodiment, in a method for manufacturing a semiconductor device, a surface region of a semiconductor substrate is modified into an amorphous layer. A microwave is irradiated to the semiconductor substrate in which the amorphous layer is formed in a dopant-containing gas atmosphere so as to form a diffusion layer in the semiconductor substrate. The dopant is diffused into the amorphous layer and is activated.

1 - 15 . (canceled) 
     
     
         16 . An apparatus for manufacturing a semiconductor device, comprising:
 a chamber to load a semiconductor substrate inside;
 a dopant containing gas introducing piping connected to the chamber so as to introduce a dopant containing gas into the chamber; and 
   at least one microwave waveguide connected to the chamber so as to introduce the microwave into the chamber; and under the condition that the dopant-containing gas is not ionized to plasma.   
     
     
         17 . The apparatus for manufacturing the semiconductor device according to  claim 16 , wherein the dopant containing gas introducing piping includes both a first piping to introduce a p-type dopant- containing gas into the chamber and a second piping to introduce an n-type dopant-containing gas into the chamber. 
     
     
         18 . The apparatus for manufacturing the semiconductor device according to  claim 16 , further comprising an inert gas introducing piping connected to the chamber so as to introduce the inert gas into the chamber. 
     
     
         19 . The apparatus for manufacturing the semiconductor device according to  claim 16 , further comprising an exhaust piping connected to the chamber so as to exhaust in the chamber. 
     
     
         20 . The apparatus for manufacturing the semiconductor device according to  claim 16 , wherein the semiconductor substrate is loaded on a boat provided in the chamber. 
     
     
         21 . The apparatus for manufacturing the semiconductor device according to  claim 16 , wherein the at least one microwave waveguide is connected to the chamber. 
     
     
         22 . The apparatus for manufacturing the semiconductor device according to  claim 16 , wherein the dopant containing gas is introduced into the chamber before an amorphous layer formed on the semiconductor substrate begins to crystallize. 
     
     
         23 . The apparatus for manufacturing the semiconductor device according to  claim 22 , wherein the temperature at which the amorphous layer begins to crystallize is from 200° C. to 600° C. 
     
     
         24 . The apparatus for manufacturing the semiconductor device according to  claim 16 , wherein the dopant containing gas is either a p-type dopant-containing gas or an n-type dopant-containing gas.) 
     
     
         25 . The apparatus for manufacturing the semiconductor device according to  claim 24 , wherein the p-type dopant-containing gas is arsine or phosphine 
     
     
         26 . The apparatus for manufacturing the semiconductor device according to  claim 24 , wherein the n-type dopant-containing gas is arsine or phosphine.