US2013216823A1PendingUtilityA1

Thermal conduction device and method for fabricating the same

Assignee: RITEDIA CORPPriority: Nov 4, 2010Filed: Apr 8, 2013Published: Aug 22, 2013
Est. expiryNov 4, 2030(~4.3 yrs left)· nominal 20-yr term from priority
H10W 40/258H10W 40/257H10W 40/254B32B 15/20B32B 2264/10B32B 5/16C09K 5/00Y10T428/25B32B 2307/302
42
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Claims

Abstract

A thermal conduction device and a method for fabricating the same are disclosed. Firstly, arrange a plurality of diamond particles on a plane according to a. predetermined pattern to form a diamond particle monolayer. Next, apply a forming process on a metal material such that the metal material forms a metal matrix wrapping the diamond particles to form a composite body including the diamond particle monolayer embedded in the metal matrix. Next, stack a plurality of the composite bodies and perform a heating process to join the metal matrixes to each other to form the thermal. conduction device. The device is characterized in arranging diamond particles on a plane to form a two-dimensional monolayer structure and manufactured via assembling the two-dimensional monolayer structures to form a three-dimensional multilayer structure. By controlling the arrangement of the diamond particles, the thermal conduction device can have superior thermal conduction performance.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A thermal conduction device comprising a metal matrix; and
 a plurality of diamond particle monolayers embedded in the metal matrix and each containing a plurality of diamond particles arranged on a plane according to a predetermined pattern.   
     
     
         2 . The thermal conduction device according to  claim 1 , wherein the diamond particles are horizontally spaced by a first distance. 
     
     
         3 . The thermal conduction device according to  claim 1 , wherein the diamond particles horizontally contact with each other. 
     
     
         4 . The thermal conduction device according to  claim 1 , wherein the diamond particle monolayers are vertically spaced by a second distance. 
     
     
         5 . The thermal conduction device according to  claim 1 , wherein the diamond particles have a diameter of 20-1000 μm. 
     
     
         6 . The thermal conduction device according to  claim 1 , wherein the diamond particles have a volume percent of 20-70% with respect to the metal matrix. 
     
     
         7 . The thermal conduction device according to  claim 6 , wherein the diamond particles have a volume percent of 30-50% with respect to the metal matrix. 
     
     
         8 . The thermal conduction device according to  claim 1 , wherein the metal matrix is made of a material selected from a group consisting of copper, aluminum, iron, cobalt, chromium and nickel. 
     
     
         9 . The thermal conduction device according to  claim 1 , having a thermal conductivity of 200-900 W/mk. 
     
     
         10 . The thermal conduction device according to  claim 1 , having a thermal expansion coefficient of 2-10 ppm/K.

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