US2013214390A1PendingUtilityA1
Tsv substrate structure and the stacked assembly thereof
Est. expiryNov 26, 2030(~4.3 yrs left)· nominal 20-yr term from priority
H10P 52/403H10P 50/264H10W 90/722H10W 90/297H10W 72/9226H10W 72/07251H10W 72/07227H10W 72/01271H10W 72/942H10W 72/923H10W 72/242H10W 72/221H10W 72/072H10W 72/29H10W 72/20H10W 90/00H10W 70/635H10W 70/611H10W 42/121H10W 20/056H10W 20/054H10W 20/042H10W 20/20H10W 20/0245H10W 20/2125H10W 20/023H01L 23/562H01L 23/5384
52
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Claims
Abstract
The disclosure provides a TSV substrate structure and the stacked assembly of a plurality of the substrate structures, the TSV substrate structure including: a substrate comprising a first surface, a corresponding second surface, and a TSV communicating the first surface with the second surface through the substrate; and a conductor unit completely filling the TSV, the conductor unit comprising a conductor body which has a first and a second ends corresponding to the first and second surfaces of the substrate, respectively.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A substrate structure comprising:
a substrate comprising a first surface, a corresponding second surface, and a through-silicon via (TSV) communicating the first surface with the second surface through the substrate; and a conductor unit completely filling the TSV, the conductor unit comprising a conductor body which has a side surface, a first endface corresponding to the first surface of the substrate, and a second endface corresponding to the second surface of the substrate.
2 . The substrate structure of claim 1 , wherein the conductor unit further comprises a first extensional part formed on the side surface of the conductor body in proximity to the first endface.
3 . The substrate structure of claim 2 , wherein the first extensional part surrounds the conductor body.
4 . The substrate structure of claim 2 , wherein the conductor unit further comprises a second extensional part formed on the side surface of the conductor body in proximity to the second endface.
5 . The substrate structure of claim 4 , wherein the second extensional part surrounds the conductor body.
6 . (canceled)
7 . The substrate structure of claim 1 , wherein the conductor unit further comprises:
a first protrusion formed on the base surface of the conductor body at the first endface; and a second protrusion formed on the second endface of the conductor body.
8 . The substrate structure of claim 1 , wherein the conductor further comprises:
a first protrusion formed on the base surface of the conductor body at the first endface; and a recess formed in the second endface of the conductor body, wherein the recess is not smaller than the first protrusion in area and is not higher than the first protrusion in highness.
9 . (canceled)
10 . The substrate structure of claim 1 , wherein the conductor unit further comprises:
a first recess formed on the base surface of the conductor body at the first endface; and a second recess formed in the second endface of the conductor body.
11 . (canceled)
12 . (canceled)
13 . (canceled)
14 . (canceled)
15 . (canceled)
16 . (canceled)
17 . (canceled)
18 . A stacked assembly comprising a plurality of substrate structures stacked on each other, each of the substrate structures comprising:
a substrate comprising a first surface, a corresponding second surface, and a TSV communicating the first surface with the second surface through the substrate; and a conductor unit completely filling the TSV, the conductor unit comprising a conductor body which has a first endface and a second endface corresponding to the first surface and second surface of the substrate respectively, and a first extensional part formed on the side surface of the conductor body in proximity to the first endface.
19 . The stacked assembly of claim 18 , wherein the first extensional part surrounds the conductor body.
20 . The stacked assembly of claim 18 , wherein the conductor unit further comprises a second extensional part formed on the side surface of the conductor body in proximity to the second end endface.
21 . The stacked assembly of claim 20 , wherein the second extensional part surrounds the conductor body.
22 . (canceled)
23 . The stacked assembly of claim 18 , wherein the conductor unit further comprises:
a first protrusion formed on a base surface of the conductor body at the first endface; and a second protrusion formed on the base surface of the conductor body at the second endface.
24 . The stacked assembly of claim 18 , wherein the conductor unit further comprises:
a first protrusion formed on a base surface of the conductor body at the first endface; and a recess formed in the base surface of the conductor body at the second endface, wherein the recess is not smaller than the protrusion in area and is not higher than the protrusion in highness.
25 . A stacked assembly comprising a plurality of substrate structures stacked on each other, each of the substrate structures comprising:
a substrate comprising a first surface, a corresponding second surface and a TSV communicating the first surface with the second surface through the substrate; and a conductor unit completely filling the TSV, the conductor unit comprising a conductor body which has a first endface and a second endface corresponding to the first surface and second surface of the substrate respectively, and a first recess formed in the base surface of the conductor body at the first endface.
26 . The stacked assembly of claim 25 , wherein the conductor unit further comprises:
a second recess formed in the base surface of the conductor body at the second endface.
27 . (canceled)
28 . (canceled)
29 . (canceled)
30 . (canceled)
31 . (canceled)
32 . (canceled)
33 . (canceled)Join the waitlist — get patent alerts
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