Semiconductor device, method of manufacturing the same, and solid-state image sensor

Abstract

A method of manufacturing a semiconductor device includes steps of providing a substrate including a semiconductor portion, a non-porous semiconductor layer, and a porous semiconductor layer arranged between the semiconductor portion and the non-porous semiconductor layer, forming a porous oxide layer by oxidizing the porous semiconductor layer, forming a bonded substrate by bonding a supporting substrate to a surface, on a side of the non-porous semiconductor layer, of the substrate on which the porous oxide layer is formed, and separating the semiconductor portion from the bonded substrate by utilizing the porous oxide layer.

1 - 10 . (canceled) 
     
     
         11 . A solid-state image sensor including a plurality of pixels formed in a single-crystal semiconductor layer, comprising:
 a wiring structure placed on the single-crystal semiconductor layer; and   a supporting substrate which supports the single-crystal semiconductor layer and the wiring structure, the supporting substrate being disposed on the wiring structure,   wherein a gap is formed in the single-crystal semiconductor layer so as to isolate pixels from each other.   
     
     
         12 . A semiconductor device including a single-crystal semiconductor layer, comprising:
 a porous oxide layer arranged on the single-crystal semiconductor layer,   wherein the porous oxide layer is formed by oxidizing a porous semiconductor layer.