Resist underlayer film forming composition for lithography containing polyether structure-containing resin

Abstract

There is provided a resist underlayer film forming composition for forming a resist underlayer film providing heat resistance properties and hardmask characteristics. A resist underlayer film forming composition for lithography, comprising: a polymer containing a unit structure of Formula (1): O—Ar 1   Formula (1) (in Formula (1), Ar 1 is a C 6-50 arylene group or an organic group containing a heterocyclic group), a unit structure of Formula (2): O—Ar 2 —O—Ar 3 -T-Ar 4   Formula (2) (in Formula (2), Ar 2 , Ar 3 , and Ar 4 are individually a C 6-50 arylene group or an organic group containing a heterocyclic group; and T is a carbonyl group or a sulfonyl group), or a combination of the unit structure of Formula (1) and the unit structure of Formula (2). The organic groups of Ar 1 and Ar 2 containing arylene group may be organic groups containing a fluorene structure.

1 . A resist underlayer film forming composition for lithography, comprising:
 a polymer containing a unit structure of Formula (1):
   O—Ar 1   Formula (1)
 
   
       (in Formula (1), Ar 1  is a C 6-50  arylene group or an organic group containing a heterocyclic group), a unit structure of Formula (2):
   O—Ar 2 —O—Ar 3 -T-Ar 4   Formula (2)
 
 
       (in Formula (2), Ar 2 , Ar 3 , and Ar 4  are individually a C 6-50  arylene group or an organic group containing a heterocyclic group; and T is a carbonyl group or a sulfonyl group), or a combination of the unit structure of Formula (1) and the unit structure of Formula (2). 
     
     
         2 . The resist underlayer film forming composition according to  claim 1 , wherein the resist underlayer film forming composition for lithography contains a polymer containing the unit structure of Formula (1), and the organic group of Ar 1  is an organic group containing a fluorene structure. 
     
     
         3 . The resist underlayer film forming composition according to  claim 1 , wherein the resist underlayer film forming composition for lithography contains a polymer containing the unit structure of Formula (2), and the organic group of Ar 2  is an organic group containing a fluorene structure. 
     
     
         4 . The resist underlayer film forming composition according to  claim 1 , wherein the resist underlayer film forming composition for lithography contains a polymer containing a combination of the unit structure of Formula (1) and the unit structure of Formula (2), and at least one of the organic group of Ar 1  and the organic group of Ar 2  is an organic group containing a fluorene structure. 
     
     
         5 . The resist underlayer film forming composition according to  claim 1 , wherein the resist underlayer film forming composition for lithography contains a polymer containing the unit structure of Formula (1), and the organic group of Ar 1  is an organic group containing a combination of an arylene group with a group containing a carbon-carbon triple bond and/or a group containing a carbon-carbon double bond. 
     
     
         6 . The resist underlayer film forming composition according to  claim 1 , wherein the resist underlayer film forming composition for lithography contains a polymer containing the unit structure of Formula (2), and the organic group of Ar 2  is an organic group containing a combination of an arylene group with a group containing a carbon-carbon triple bond and/or a group containing a carbon-carbon double bond. 
     
     
         7 . The resist underlayer film forming composition according to  claim 1 , wherein the resist underlayer film forming composition for lithography contains a polymer containing a combination of the unit structure of Formula (1) and the unit structure of Formula (2), and at least one of the organic group of Ar 1  and the organic group of Ar 2  is an organic group containing a combination of an arylene group with a group containing a carbon-carbon triple bond and/or a group containing a carbon-carbon double bond. 
     
     
         8 . The resist underlayer film forming composition according to  claim 1 , wherein the resist underlayer film forming composition for lithography contains a polymer containing the unit structure of Formula (1), and the organic group of Ar 1  is an organic group containing a biphenylene structure. 
     
     
         9 . The resist underlayer film forming composition according to  claim 1 , wherein the resist underlayer film forming composition for lithography contains a polymer containing the unit structure of Formula (2), and the organic group of Ar 2  is an organic group containing a biphenylene structure. 
     
     
         10 . The resist underlayer film forming composition according to  claim 1 , wherein the resist underlayer film forming composition for lithography contains a polymer containing a combination of the unit structure of Formula (1) and the unit structure of Formula (2), and at least one of the organic group of Ar 1  and the organic group of Ar 2  is an organic group containing a biphenylene structure. 
     
     
         11 . The resist underlayer film forming composition according to  claim 1 , wherein the resist underlayer film forming composition for lithography contains a polymer containing the unit structure of Formula (2), and at least one of the organic group of Ar 3  and the organic group of Ar 4  is a phenylene group. 
     
     
         12 . The resist underlayer film forming composition according to  claim 1 , wherein the resist underlayer film forming composition for lithography contains a polymer containing a combination of the unit structure of Formula (1) and the unit structure of Formula (2), and at least one of the organic group of Ar 3  and the organic group of Ar 4  is a phenylene group. 
     
     
         13 . The resist underlayer film forming composition according to  claim 1 , further comprising an acid or an acid generator. 
     
     
         14 . A resist underlayer film obtained by applying the resist underlayer film forming composition as claimed in  claim 1  onto a semiconductor substrate and baking the resultant film. 
     
     
         15 . A method for producing a semiconductor device, the method comprising:
 a process of forming an underlayer film with the resist underlayer film forming composition as claimed in  claim 1  on a semiconductor substrate;   a process of forming a resist film on the underlayer film;   a process of irradiating the resist film with light or an electron beam and developing the resist film so as to form a resist pattern;   a process of etching the underlayer film according to the resist pattern of the resist film; and   a process of processing the semiconductor substrate according to the patterned underlayer film.   
     
     
         16 . A method for producing a semiconductor device, the method comprising:
 a process of forming an underlayer film with the resist underlayer film forming composition as claimed in  claim 1  on a semiconductor substrate;   a process of forming a hardmask on the underlayer film;   a process of further forming a resist film on the hardmask;   a process of irradiating the resist film with light or an electron beam and developing the resist film so as to form a resist pattern;   a process of etching the hardmask according to the resist pattern of the resist film;   a process of etching the underlayer film according to the patterned hardmask; and   a process of processing the semiconductor substrate according to the patterned underlayer film.