Solid-state image sensor, signal processing method and electronic apparatus

Abstract

There is provided a solid-state image sensor including pixels each at least including light receiving parts receiving light to generate charge, a transfer part transferring the charge accumulated in the light receiving parts, and memory parts holding the charge transferred via the transfer part, and a predetermined number of elements shared by the plurality of pixels, the predetermined number of elements being for outputting a pixel signal at a level corresponding to the charge, wherein one or some of the plurality of pixels is/are a correction pixel(s) outputting a correction pixel signal used for correcting a pixel signal outputted from pixels other than the one or some of the plurality of pixels, and one or some of the predetermined number of elements is/are formed on a wiring layer side of the light receiving parts included in the correction pixel(s).

What is claimed is: 
     
         1 . A solid-state image sensor comprising:
 pixels each at least including
 light receiving parts receiving light to generate charge, 
 a transfer part transferring the charge accumulated in the light receiving parts, and 
 memory parts holding the charge transferred via the transfer part; and 
   a predetermined number of elements shared by the plurality of pixels, the predetermined number of elements being for outputting a pixel signal at a level corresponding to the charge, wherein   one or some of the plurality of pixels is/are a correction pixel(s) outputting a correction pixel signal used for correcting a pixel signal outputted from pixels other than the one or some of the plurality of pixels, and   the one or some of the predetermined number of elements is/are formed on a wiring layer side of the light receiving parts included in the correction pixel(s).   
     
     
         2 . The solid-state image sensor according to  claim 1 , wherein
 the transfer part transfers the charge accumulated in the light receiving parts to the memory parts at a substantially same time point for the plurality of pixels.   
     
     
         3 . The solid-state image sensor according to  claim 1 , wherein
 the light received by the light receiving parts enters a backside opposite to a surface on which a wiring layer is laminated in a semiconductor substrate in which the light receiving parts are formed.   
     
     
         4 . The solid-state image sensor according to  claim 1 , wherein
 a normal pixel other than the correction pixel(s) out of the plurality of pixels receives light of a corresponding color, and   the correction pixel(s) is/are provided for each color of the light received by the normal pixel.   
     
     
         5 . The solid-state image sensor according to  claim 1 , wherein
 the correction pixel(s) receives light that does not pass through a color filter.   
     
     
         6 . The solid-state image sensor according to  claim 3 , wherein
 the correction pixel(s) receives red light.   
     
     
         7 . The solid-state image sensor according to  claim 1 , wherein
 the light receiving parts of the correction pixel(s) and the light receiving part(s) of the pixel which is disposed adjacent to the correction pixel(s) and receives light of a color same as that of the correction pixel(s) are formed by connecting to each other.   
     
     
         8 . A signal processing method for a solid-state image sensor including, the solid-state image sensor including
 pixels each at least including
 light receiving parts receiving light to generate charge, 
 a transfer part transferring the charge accumulated in the light receiving parts, and 
 memory parts holding the charge transferred via the transfer part, and 
   a predetermined number of elements shared by the plurality of pixels, the predetermined number of elements being for outputting a pixel signal at a level corresponding to the charge, wherein   one or some of the plurality of pixels is/are a correction pixel(s) outputting a correction pixel signal used for correcting a pixel signal outputted from pixels other than the one or some of the plurality of pixels, and   the one or some of the predetermined number of elements is/are formed on the light receiving parts included in the correction pixel(s),   
       the method comprising:
 subtracting the pixel signal outputted from the correction pixel(s) from the pixel signal outputted from a normal pixel other than the correction pixel(s). 
 
     
     
         9 . An electronic apparatus comprising:
 a solid-state image sensor including
 pixels each at least including
 light receiving parts receiving light to generate charge, 
 a transfer part transferring the charge accumulated in the light receiving parts, and 
 memory parts holding the charge transferred via the transfer part, and 
 
 a predetermined number of elements shared by the plurality of pixels, for the predetermined number of elements being for outputting a pixel signal at a level corresponding to the charge, wherein 
 one or some of the plurality of pixels is/are a correction pixel(s) outputting a correction pixel signal used for correcting a pixel signal outputted from pixels other than the one or some of the plurality of pixels, and 
 the one or some of the predetermined number of elements is/are formed on the light receiving parts included in the correction pixel(s).