FLAT Ni PARTICLE, LAMINATED CERAMIC ELECTRONIC COMPONENT USING FLAT Ni PARTICLE, AND PRODUCTION METHOD FLAT Ni PARTICLE

Abstract

Provided is a flat Ni particle which has a large specific surface area, permitting efficient binder removal when the flat Ni particle is used for internal electrodes of a laminated ceramic electronic component. The flat Ni particle has a thickness t (m), a specific gravity ρ (g/m 3 ), and a radius r (m), and a specific surface area S 1 (m 2 /g), such that the specific surface area S 1 is adapted to have a relationship of 1.5×S 0 <S 1 <1.9×S 0 with a theoretical specific surface area in the case of assuming a surface to be completely smooth, represented by S 0 =2/(ρ×t)+2√2/(ρ×r)(m 2 /g).

1 . A flat Ni particle having a thickness t (m), a specific gravity ρ (g/m 3 ), and a radius r (m) obtained from half the length of a diagonal line in the case of assuming a planar shape to be a square, and a specific surface area S 1  (m 2 /g), wherein the specific surface area S 1  has a relationship of 1.5×S 0 <S 1 <2.1×S 0  with a theoretical specific surface area S 0  in the case of assuming a surface to be completely smooth represented by S 0 =2/(ρ×t)+2√2/(ρ×r)(m 2 /g), and wherein the particle has an average diameter of at least 1.4 μm. 
     
     
         2 . The flat Ni particle according to  claim 1 , wherein the specific surface area S 1  has a relationship of 1.60×S 0 ≦S 1 ≦2.08×S 0 . 
     
     
         3 . The flat Ni particle according to  claim 2 , wherein the flat Ni particle has a thickness of 100 nm or less. 
     
     
         4 . The flat Ni particle according to  claim 3 , wherein the flat Ni particle has a thickness of 50 nm or less. 
     
     
         5 . The flat Ni particle according to  claim 1 , wherein the flat Ni particle has a thickness of 100 nm or less. 
     
     
         6 . The flat Ni particle according to  claim 5 , wherein the flat Ni particle has a thickness of 50 nm or less. 
     
     
         7 . A method for producing the flat Ni particle according to  claim 1 , the method comprising:
 providing a positive electrode and a negative electrode;   immersing the positive electrode and the negative electrode in a Ni plating solution;   applying an electric current between the positive electrode and the negative electrode immersed in the Ni plating solution to form a Ni film on a surface of the negative electrode;   separating the Ni film formed on the surface of the negative electrode therefrom; and   grinding the separated Ni film to obtain a Ni particle, wherein the temperature of the negative electrode is at least 10° C. lower than the temperature of the Ni plating solution at the point of the Ni plating.   
     
     
         8 . The method for producing a flat Ni particle according to  claim 7 , wherein the temperature of the negative electrode is at least 20° C. lower than the temperature of the Ni plating solution at the point of the Ni plating. 
     
     
         9 . The method for producing a flat Ni particle according to  claim 8 , wherein the Ni plating solution is made by a chlorinated Ni bath. 
     
     
         10 . The method for producing a flat Ni particle according to  claim 9 , wherein the temperature of the negative electrode is at least 30° C. or more lower than the temperature of the Ni plating solution at the point of the Ni plating. 
     
     
         11 . The method for producing a flat Ni particle according to  claim 7 , wherein the Ni plating solution is made by a chlorinated Ni bath. 
     
     
         12 . The method for producing a flat Ni particle according to  claim 11 , wherein the temperature of the negative electrode is at least 30° C. or more lower than the temperature of the Ni plating solution at the point of the Ni plating.