US2013160978A1PendingUtilityA1

Heat dissipating substrate and method of manufacturing the same

Assignee: SAMSUNG ELECTRO MECHPriority: Dec 21, 2011Filed: Dec 20, 2012Published: Jun 27, 2013
Est. expiryDec 21, 2031(~5.4 yrs left)· nominal 20-yr term from priority
H10W 72/552H10W 90/754H10W 74/00H10H 20/8506H10H 20/857H10H 20/0365H10H 20/8581H10H 20/85H05K 2201/10106H05K 1/053H05K 3/445F28F 21/084
37
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

Disclosed herein are a heat dissipating substrate and a method of manufacturing the same. The heat dissipating substrate includes: a substrate that is formed of a metal material, wherein at least one via hole is formed in the substrate; an insulating layer formed on a surface of the substrate; a coating layer that is formed on an inner wall surface of the via hole and is formed of a conductive or non-conductive material; a plurality of metal patterns that are formed on the insulating layer and are electrically separated from one another; a metal layer that is extended from the metal patterns to be formed on the coating layer formed on the inner wall surface of the via hole; and a filling material that is formed of a non-conductive material and is filled between the metal layers in the via hole.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A heat dissipating substrate, comprising:
 a substrate that is formed of a metal material, wherein at least one via hole is formed in the substrate;   an insulating layer formed on a surface of the substrate;   a coating layer that is formed on an inner wall surface of the via hole and is formed of a conductive or non-conductive material;   a plurality of metal patterns that are formed on the insulating layer and are electrically separated from one another;   a metal layer that is extended from the metal patterns to be formed on the coating layer formed on the inner wall surface of the via hole; and   a filling material that is formed of a non-conductive material and is filled between the metal layers in the via hole.   
     
     
         2 . The heat dissipating substrate according to  claim 1 , wherein the substrate is formed of a metal having an excellent thermal conductivity and is formed of aluminum (Al). 
     
     
         3 . The heat dissipating substrate according to  claim 1 , wherein the insulating layer formed on the surface of the substrate is formed of an oxide coating layer (Al 2 O 3 ) by anodizing. 
     
     
         4 . The heat dissipating substrate according to  claim 1 , wherein the via hole is formed by using a mechanical method such as drilling or punching or a chemical method such as etching. 
     
     
         5 . The heat dissipating substrate according to  claim 1 , wherein the metal patterns are formed on portions of an upper surface of the substrate that are exposed by removing a portion of the insulating layer. 
     
     
         6 . The heat dissipating substrate according to  claim 1 , wherein the filling material is formed of a non-conductive material such as epoxy or polymer. 
     
     
         7 . A method of manufacturing a heat dissipating substrate, the method comprising:
 preparing a metal substrate and forming at least one via hole that passes through the metal substrate;   forming an insulating layer on a surface of the metal substrate including the via hole;   forming a coating layer using a non-conductive material on an inner wall surface of the via hole, on which the insulating layer is formed;   forming a metal layer on the coating layer formed on the inner wall surface of the via hole and the insulating layer formed on the surface of the metal substrate;   forming a plurality of metal patterns by patterning the metal layer formed on the insulating layer formed on the surface of the metal substrate; and   injecting a filling material formed of a non-conductive material between coating layers formed on the inner wall surface of the via hole.   
     
     
         8 . The method according to  claim 7 , wherein in the forming of the insulating layer on a surface of the metal substrate, the insulating layer is formed of an oxide coating layer by anodizing. 
     
     
         9 . The method according to  claim 7 , wherein the forming of the coating layer on an inner wall surface of the via hole includes:
 filling a non-conductive material in the via hole through a plugging process; and   forming a through hole in the non-conductive material filled in the via hole.   
     
     
         10 . The method according to  claim 1 , wherein the non-conductive material filled in the via hole is epoxy or polymer, and the through hole is formed by drilling or laser processing. 
     
     
         11 . A method of manufacturing a heat dissipating substrate, the method comprising:
 preparing a metal substrate and forming at least one via hole that passes through the metal substrate;   forming an insulating layer on a surface of the metal substrate including the via hole;   forming a coating layer formed of a conductive material on an inner wall surface of the via hole, on which the insulating layer is formed;   forming a metal layer on the coating layer formed on the inner wall surface of the via hole and the insulating layer formed on the surface of the metal substrate;   forming a plurality of metal patterns by patterning the metal layer formed on the insulating layer formed on the surface of the metal substrate; and   injecting a filling material formed of a non-conductive material between the coating layers formed on the inner wall surface of the via hole.   
     
     
         12 . The method according to  claim 11 , wherein the forming of the coating layer on an inner wall surface of the via hole includes:
 fill plating an inner portion of the via hole using a conductive material through a plating process; and   forming a through hole in the fill-plated conductive material formed in the via hole.   
     
     
         13 . The method according to  claim 11 , wherein in the forming of the coating layer on an inner wall surface of the via hole, the conductive material is formed, as a seed layer, only on the inner wall surface of the via hole through a plating process.

Join the waitlist — get patent alerts

Track US2013160978A1 — get alerts on status changes and closely related new filings.

We store only your email — no account needed. See our privacy policy.