Method of manufacturing semiconductor device and substrate processing apparatus

Abstract

A film is formed on a substrate by performing a cycle at least twice, the cycle including a nucleus formation process for forming nuclei on the substrate and a nucleus growth suppression process for suppressing growth of the nuclei. A time required for the nucleus growth suppression process is less than or equal to a time required for the nucleus formation process. Alternatively, the nucleus formation process is further performed after the cycle is repeatedly performed a plurality of times.

What is claimed is: 
     
         1 . A method of manufacturing a semiconductor device, comprising forming a silicon film by performing a cycle at least twice, the cycle including a nucleus growth suppression process of supplying a chlorine-containing gas onto a substrate to suppress a growth of nuclei and control a local growth of silicon on the substrate and a nucleus formation process of supplying a silicon-containing gas onto the substrate to form silicon nuclei on the substrate,
 wherein a time required for the nucleus growth suppression process is less than or equal to a time required for the nucleus formation process.   
     
     
         2 . A substrate processing apparatus comprising:
 a process chamber configured to process a substrate;   a chlorine-containing gas supply system configured to supply at least a chlorine-containing gas into the process chamber;   a silicon-containing gas supply system configured to supply at least a silicon-containing gas into the process chamber; and   a controller configured to control at least the chlorine-containing gas supply system and the silicon-containing gas supply system to form a silicon film by performing a cycle at least twice, the cycle including a nucleus growth suppression process of supplying the chlorine-containing gas onto the substrate to suppress a growth of nuclei and control a local growth of silicon on the substrate and a nucleus formation process of supplying the silicon-containing gas onto the substrate to form silicon nuclei on the substrate, wherein a time required for the nucleus growth suppression process is less than or equal to a time required for the nucleus formation process.   
     
     
         3 . The method of  claim 1 , further comprising performing the nucleus formation process after the cycle is performed at least twice. 
     
     
         4 . The method of  claim 1 , wherein the time required for the nucleus growth suppression process is 0.4 to 1 times the time required for the nucleus formation process.