US2013145775A1PendingUtilityA1

Gas fraction extractor utilizing direct thermoelectric converters

Assignee: OREM PETER MILONPriority: Dec 8, 2011Filed: Dec 10, 2012Published: Jun 13, 2013
Est. expiryDec 8, 2031(~5.4 yrs left)· nominal 20-yr term from priority
F24F 3/1405F24F 2003/144F24F 5/0042B01D 5/0042
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Claims

Abstract

A direct thermoelectric converter includes a condensing surface. The condensing surface conducts heat to a silicon matrix to cool the condensing surface to a temperature to precipitate a gas fraction from a flow of gas. The matrix includes a first layer of low recombination material fused to a first layer of high recombination material at a first n-type junction, the first layer high recombination material fused to a second layer of low recombination material at a p-type junction, the second layer of low recombination material fused to a second layer of high recombination material at a second n-type junction. Each of a positive and a negative terminal are affixed conductively to the silicon matrix thereby to supply a current of electrons at a supply voltage. A controller senses the current of electrons and selectively connects the direct thermoelectric converter to a load in response to the supply of electrons.

Claims

exact text as granted — not AI-modified
The embodiments of the invention in which an exclusive property or privilege is claimed are defined as follows: 
     
         1 . An apparatus for condensing a gas fraction from a flow of gas comprises:
 a direct thermoelectric converter including:
 a condensing chamber having a condensing surface, the condensing surface conducting heat to a silicon matrix including a first layer of low recombination material fused to a first layer of high recombination material at a first n-type junction, the first layer high recombination material being fused to a second layer of low recombination material at a p-type junction, the second layer of low recombination material being further fused to a second layer of high recombination material at a second n-type junction; 
 each of a positive and a negative terminal affixed conductively to the silicon matrix thereby to supply a current of electrons at a supply voltage; and 
 a controller to sense the current of electrons and to selectively connect the direct thermoelectric converter to a load in response to the supply of electrons.

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