US2013134552A1PendingUtilityA1

Semiconductor device and semiconductor device manufacturing method

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Assignee: ELPIDA MEMORY INCPriority: Apr 8, 2009Filed: Jan 23, 2013Published: May 30, 2013
Est. expiryApr 8, 2029(~2.7 yrs left)· nominal 20-yr term from priority
Inventors:Hiroaki IkedaMitsuru ShiozakiAtsushi Iwata
H10W 72/9415H10W 72/244H10W 72/29H10W 20/20H10W 20/01H10W 20/0234H10W 20/212H10W 20/0242H10D 84/00H10D 1/20H01L 28/10H01L 21/768
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Claims

Abstract

A semiconductor device includes a pair of electromagnetically coupled inductors. Each of the inductors is comprised of a plurality of through electrodes which extend through a semiconductor substrate, and wires which connect the plurality of through electrodes in series.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A semiconductor device comprising an inductor, said inductor including a plurality of through electrodes which extend through a substrate, and wires which connect said plurality of through electrodes in series. 
     
     
         2 . The semiconductor device according to  claim 1 , further comprising a magnetic core which serves as a magnetic core for said inductor. 
     
     
         3 . The semiconductor device according to  claim 2 , wherein said magnetic core is comprised of a plurality of partial magnetic core segments. 
     
     
         4 . The semiconductor device according to  claim 2 , comprising a plurality of said magnetic cores. 
     
     
         5 . The semiconductor device according to  claim 2 , wherein said magnetic core and said through electrodes are formed of the same magnetic material. 
     
     
         6 . The semiconductor device according to  claim 3 , wherein said magnetic core and said through electrodes are formed of the same magnetic material. 
     
     
         7 . The semiconductor device according to  claim 4 , wherein said magnetic core and said through electrodes are formed of the same magnetic material. 
     
     
         8 . The semiconductor device according to  claim 5 , wherein said magnetic core and said through electrodes are formed of nickel. 
     
     
         9 . The semiconductor device according to  claim 6 , wherein said magnetic core and said through electrodes are formed of nickel. 
     
     
         10 . The semiconductor device according to  claim 7 , wherein said magnetic core and said through electrodes are formed of nickel. 
     
     
         11 . The semiconductor device according to  claim 2 , further comprising a magnetic element arranged around said inductor. 
     
     
         12 . The semiconductor device according to  claim 3 , further comprising a magnetic element arranged around said inductor. 
     
     
         13 . The semiconductor device according to  claim 4 , further comprising a magnetic element arranged around said inductor. 
     
     
         14 . The semiconductor device according to  claim 5 , further comprising a magnetic element arranged around said inductor. 
     
     
         15 . The semiconductor device according to  claim 6 , further comprising a magnetic element arranged around said inductor. 
     
     
         16 . The semiconductor device according to  claim 11 , wherein said magnetic element is connected to said magnetic core. 
     
     
         17 . The semiconductor device according to  claim 11 , wherein said magnetic core, said through electrodes, and said magnetic element are formed of the same magnetic material. 
     
     
         18 . The semiconductor device according to  claim 17 , wherein said magnetic core, said through electrodes, and said magnetic element are formed of nickel. 
     
     
         19 . The semiconductor device according to  claim 2 , wherein at least part of said inductor is disposed within a circumference formed by another inductor. 
     
     
         20 . A method of manufacturing a semiconductor device comprising:
 forming a throughhole for use as a through wire and a throughhole for use as an inductor through a substrate having a wiring layer formed on one surface, from the other surface of said substrate to said wiring layer;   forming an insulating layer on a side surface of said throughhole for use as a through wire and on a side surface of said throughhole for use as an inductor; and   forming a conductive layer on a bottom surface of said throughhole for use as a through wire, on a bottom surface of said throughhole for use as an inductor, and on said insulating layer.

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