Semiconductor device with side-junction and method for fabricating the same

Abstract

A method for fabricating a semiconductor device includes forming a plurality of bodies that are each isolated from another by a trench and each include a diffusion barrier region with a sidewall exposed to the trench, forming a doped layer gap-filling the trench, forming a sidewall junction at the exposed sidewall of the diffusion barrier region by annealing the doped layer, and forming a conductive line coupled with the sidewall junction to fill the trench.

1 - 17 . (canceled) 
     
     
         18 . A semiconductor device, comprising:
 a plurality of bodies that are each isolated from another by a trench and each include a diffusion barrier region with a sidewall exposed to the trench;   an insulation layer through which a sidewall contact is formed to expose the exposed sidewall of the diffusion barrier region;   a sidewall junction formed at the exposed sidewall of the diffusion barrier region;   a buried bit line coupled with the sidewall junction and filled a portion of the trench;   a plurality of pillars formed over the plurality of the bodies, respectively; and   a vertical word line extending along a sidewall of each of the pillars in a direction crossing the buried bit line.   
     
     
         19 . The semiconductor device of  claim 18 , wherein the diffusion barrier region comprises an interstitial impurity. 
     
     
         20 . The semiconductor device of  claim 18 , wherein the diffusion barrier region is doped with carbon. 
     
     
         21 . The semiconductor device of  claim 18 , wherein the sidewall junction is doped with phosphorus (P).