US2013130595A1PendingUtilityA1
Polishing agent and polishing method
Est. expiryJul 9, 2030(~3.9 yrs left)· nominal 20-yr term from priority
Inventors:Yuiko Yoshida
H10P 90/129H10P 52/00H10H 20/01335C09K 3/1409B24B 37/044C09K 3/14B24B 37/00
25
PatentIndex Score
0
Cited by
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Claims
Abstract
The present invention relates to a polishing agent for polishing a surface to be polished of an object to be polished, the polishing agent including: first silicon oxide fine particles having an average primary particle size of 5 to 20 nm; second silicon oxide fine particles having an average primary particle size of 40 to 110 nm; and water, in which a ratio of the first silicon oxide fine particles to a total amount of the first silicon oxide fine particles and the second silicon oxide fine particles is from 0.7 to 30% by mass.
Claims
exact text as granted — not AI-modified1 . A polishing agent for polishing a surface to be polished of an object to be polished, the polishing agent comprising:
first silicon oxide fine particles having an average primary particle size of 5 to 20 nm; second silicon oxide fine particles having an average primary particle size of 40 to 110 nm; and water, wherein a ratio of the first silicon oxide fine particles to a total amount of the first silicon oxide fine particles and the second silicon oxide fine particles is from 0.7 to 30% by mass.
2 . The polishing agent according to claim 1 , wherein both the first silicon oxide fine particles and the second silicon oxide fine particles are colloidal silica.
3 . The polishing agent according to claim 1 , wherein the ratio of the first silicon oxide fine particles to the total amount of the first silicon oxide fine particles and the second silicon oxide fine particles is from 1 to 10% by mass.
4 . The polishing agent according to claim 1 , wherein the second silicon oxide fine particles have an average primary particle size of 45 to 100 nm.
5 . The polishing agent according to claim 1 , wherein the first silicon oxide fine particles have an average primary particle size of 5 to 15 nm.
6 . The polishing agent according to claim 1 , wherein the object to be polished is a single-crystal substrate having a revised Mohs hardness of 10 or more.
7 . A polishing method comprising:
supplying the polishing agent according to claim 1 to a polishing pad; and bringing the polishing pad into contact with a surface to be polished of an object to be polished to perform polishing by relative movement between the polishing pad and the surface to be polished.
8 . The polishing method according to claim 7 , wherein an operation of recovering the polishing agent supplied to the polishing pad and used for polishing, and of supplying again the recovered polishing agent to the polishing pad is repeated, thereby using the polishing agent in cycles.Join the waitlist — get patent alerts
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