US2013127057A1PendingUtilityA1

Seed layer passivation

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Individually held — no corporate assignee on recordPriority: Feb 10, 2011Filed: Jan 18, 2013Published: May 23, 2013
Est. expiryFeb 10, 2031(~4.5 yrs left)· nominal 20-yr term from priority
Inventors:Callie A. SchiefferIsmail Emesh
H10P 95/00H10P 72/1926H10P 72/1902H10W 20/0526H10W 20/425H10W 20/076H10W 20/048H10W 20/043H10W 72/30H01L 24/33
40
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Claims

Abstract

A microfeature workpiece generally includes a first conducting layer, a chemisorbed layer or a monolayer directly on the first conducting layer, and a second conducting layer. The chemisorbed layer or monolayer includes a first material that may be selected from the group consisting of nitrogen-containing compounds, sulfur-containing compounds, and mixtures thereof.

Claims

exact text as granted — not AI-modified
The embodiments of the disclosure in which an exclusive property or privilege is claimed are defined as follows: 
     
         1 . A microfeature workpiece, comprising;
 (a) a first conducting layer;   (b) a chemisorbed layer including at least a first material directly on the first conducting layer, wherein the first material is selected from the group consisting of nitrogen-containing compounds, sulfur-containing compounds, and mixtures thereof; and   (c) a second conducting layer directly on the chemisorbed layer.   
     
     
         2 . The workpiece of  claim 1 , wherein the first conducting layer is a seed layer. 
     
     
         3 . The workpiece of  claim 2 , wherein the seed layer includes a metal selected from the group consisting of ruthenium, copper, cobalt, nickel, other noble metals besides ruthenium, copper manganese, copper alloys, ruthenium alloys, nickel alloys, and cobalt alloys. 
     
     
         4 . The workpiece of  claim 1 , further comprising a barrier layer on the workpiece prior to the first conducting layer. 
     
     
         5 . The workpiece of  claim 4 , wherein the barrier layer is deposited on a substrate. 
     
     
         6 . The workpiece of  claim 1 , wherein the second conducting layer includes copper. 
     
     
         7 . The workpiece of  claim 1 , wherein the second conducting layer is deposited using a damascene fill process. 
     
     
         8 . The workpiece of  claim 1 , wherein the second conducting layer is deposited using an electrochemical deposition process. 
     
     
         9 . The workpiece of  claim 1 , further including a wet seed layer on the chemisorbed layer, then depositing the second conducting layer on the wet seed layer using a damascene fill process. 
     
     
         10 . The workpiece of  claim 9 , wherein the wet seed layer is composed of copper deposited on the chemisorbed layer by an electrochemical deposition process. 
     
     
         11 . The workpiece of  claim 1 , wherein the chemisorbed layer acts as an accelerator to enhance copper plating. 
     
     
         12 . A microfeature workpiece, comprising;
 (a) a first conducting layer;   (b) a monolayer layer including at least a first material directly on the first conducting layer, wherein the first material is selected from the group consisting of nitrogen-containing compounds, sulfur-containing compounds, and mixtures thereof; and   (c) a second conducting layer directly on the monolayer.   
     
     
         13 . The workpiece of  claim 12 , wherein the first conducting layer is a seed layer. 
     
     
         14 . The workpiece of  claim 13 , wherein the seed layer includes a metal selected from the group consisting of ruthenium, copper, cobalt, nickel, other noble metals besides ruthenium, copper manganese, copper alloys, ruthenium alloys, nickel alloys, and cobalt alloys. 
     
     
         15 . The workpiece of  claim 12 , further comprising a barrier layer on the workpiece prior to the first conducting layer. 
     
     
         16 . The workpiece of  claim 15 , wherein the barrier layer is deposited on a substrate. 
     
     
         17 . The workpiece of  claim 12 , wherein the second conducting layer includes copper. 
     
     
         18 . The workpiece of  claim 12 , wherein the second conducting layer is deposited using a damascene fill process. 
     
     
         19 . The workpiece of  claim 12 , wherein the second conducting layer is deposited using an electrochemical deposition process. 
     
     
         20 . The workpiece of  claim 12 , further including a wet seed layer on the monolayer, then depositing the second conducting layer on the wet seed layer using a damascene fill process. 
     
     
         21 . The workpiece of  claim 20 , wherein the wet seed layer is composed of copper deposited on the monolayer by an electrochemical deposition process. 
     
     
         22 . The workpiece of  claim 12 , wherein the monolayer acts as an accelerator to enhance copper plating.

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