Light-Emitting Diode Chip with Current Spreading Layer

Abstract

A light-emitting diode chip includes a semiconductor layer sequence having a phosphide compound semiconductor material. The semiconductor layer sequence contains a p-type semiconductor region, an n-type semiconductor region, and an active layer arranged between the p-type semiconductor region and the n-type semiconductor region. The active region serves to emit electromagnetic radiation. The n-type semiconductor region faces a radiation exit area of the light-emitting diode chip, and the p-type semiconductor region faces a carrier of the light-emitting diode chip. A current spreading layer having a thickness of less than 500 nm is arranged between the carrier and the p-type semiconductor region. The current spreading layer has one or a plurality of p-doped Al x Ga 1-x As layers with 0.5<x≦1.

1 - 15 . (canceled) 
     
     
         16 . A light-emitting diode chip comprising a semiconductor layer sequence comprising a phosphide compound semiconductor material, wherein the semiconductor layer sequence comprises:
 a p-type semiconductor region, wherein the p-type semiconductor region faces a carrier of the light-emitting diode chip;   an n-type semiconductor region, wherein the n-type semiconductor region faces a radiation exit area of the light-emitting diode chip;   an active layer arranged between the p-type semiconductor region and the n-type semiconductor region, the active layer configured to emit electromagnetic radiation; and   a current spreading layer having a thickness of less than 500 nm arranged between the carrier and the p-type semiconductor region, the current spreading layer comprising a p-doped Al x Ga 1-x As layer, where 0.5<x≦1.   
     
     
         17 . The light-emitting diode chip according to  claim 16 , wherein the current spreading layer has a thickness of less than 300 nm. 
     
     
         18 . The light-emitting diode chip according to  claim 16 , wherein 0.6≦x≦0.8. 
     
     
         19 . The light-emitting diode chip according to  claim 16 , wherein the current spreading layer comprises a plurality of p-doped Al x Ga 1-x As layers. 
     
     
         20 . The light-emitting diode chip according to  claim 16 , wherein the current spreading layer has a dopant concentration of more than 1*10 19  cm −3 . 
     
     
         21 . The light-emitting diode chip according to  claim 16 , wherein the current spreading layer has a dopant concentration of at least 5*10 19  cm −3 . 
     
     
         22 . The light-emitting diode chip according to  claim 16 , wherein the current spreading layer is doped with carbon. 
     
     
         23 . The light-emitting diode chip according to  claim 16 , further comprising an encapsulation layer overlying the current spreading layer including side flanks of the current spreading layer. 
     
     
         24 . The light-emitting diode chip according to  claim 23 , wherein the encapsulation layer contains silicon oxide, silicon nitride, zinc oxide or a metal. 
     
     
         25 . The light-emitting diode chip according to  claim 16 , wherein the current spreading layer has oblique side flanks that are inclined at an angle of between 20° and 70° inclusive with respect to a layer plane of the current spreading layer. 
     
     
         26 . The light-emitting diode chip according to  claim 16 , wherein a trench is formed in the current spreading layer. 
     
     
         27 . The light-emitting diode chip according to  claim 26 , wherein the trench is filled with silicon nitride, silicon oxide, zinc oxide or a metal. 
     
     
         28 . The light-emitting diode chip according to  claim 26 , wherein the trench extends into the p-type semiconductor region. 
     
     
         29 . The light-emitting diode chip according to  claim 16 , further comprising a further layer composed of In x Ga y Al 1-x-y As, where 0≦x≦1, 0≦y≦1 and x+y≦1, adjoining the current spreading layer, the further layer having a smaller band gap and a lower dopant concentration than the current spreading layer. 
     
     
         30 . The light-emitting diode chip according to  claim 16 , wherein a growth substrate is detached from the semiconductor layer sequence and the carrier is different than a growth substrate of the semiconductor layer sequence. 
     
     
         31 . The light-emitting diode chip according to  claim 30 , wherein the carrier comprises silicon, molybdenum or germanium. 
     
     
         32 . A light-emitting diode chip comprising a semiconductor layer sequence comprising a phosphide compound semiconductor material, wherein the semiconductor layer sequence comprises:
 a p-type semiconductor region, wherein the p-type semiconductor region faces a carrier of the light-emitting diode chip;   an n-type semiconductor region, wherein the n-type semiconductor region faces a radiation exit area of the light-emitting diode chip;   an active layer arranged between the p-type semiconductor region and the n-type semiconductor region, the active layer configured to emit electromagnetic radiation;   a current spreading layer having a thickness of less than 500 nm arranged between the carrier and the p-type semiconductor region, the current spreading layer having a p-doped Al x Ga 1-x As layer with 0.5<x≦1; and   a further layer composed of In x Ga y Al 1-x-y As, where 0≦x≦1, 0≦y≦1 and x+y≦1, adjoining the current spreading layer, the further layer having a smaller band gap and a lower dopant concentration than the current spreading layer.   
     
     
         33 . A light-emitting diode chip comprising a semiconductor layer sequence comprising a phosphide compound semiconductor material, wherein the semiconductor layer sequence comprises:
 a p-type semiconductor region, wherein the p-type semiconductor region faces a carrier of the light-emitting diode chip;   an n-type semiconductor region, wherein the n-type semiconductor region faces a radiation exit area of the light-emitting diode chip;   an active layer arranged between the p-type semiconductor region and the n-type semiconductor region, the active layer configured to emit electromagnetic radiation; and   a current spreading layer having a thickness of less than 500 nm arranged between the carrier and the p-type semiconductor region, the current spreading layer having one or a plurality of p-doped Al x Ga 1-x As layers with 0.5<x≦1, wherein the current spreading layer has oblique side flanks, that are inclined at an angle of between 20° and 70° inclusive with respect to a layer plane of the current spreading layer.