Method for cleaning platinum residues on a semiconductor substrate

Abstract

A method for cleaning platinum residues from a surface of a substrate is provided. The method initiates with exposing the surface to a first solution containing a mixture of nitric acid and hydrochloric acid. Then, the surface is exposed to a second solution containing hydrochloric acid.

What is claimed is: 
     
         1 . A system for cleaning platinum residues from a surface of a substrate, the system comprising:
 a first solution source containing a first solution, the first solution including a mixture of nitric acid and hydrochloric acid;   a second solution source containing a second solution, the second solution including hydrochloric acid;   a process chamber, the process chamber having a first dispenser for dispensing the first solution onto the substrate and a second dispenser for dispensing the second solution onto the substrate;   a controller configured to control the process chamber, the first dispenser, and the second dispenser, to provide for exposure of the substrate to the first solution followed by exposure of the substrate to the second solution.   
     
     
         2 . The system for cleaning platinum residues from a surface of a substrate as recited in  claim 1 ,
 wherein the molar ratio of nitric acid to hydrochloric acid in the first solution is approximately 1:3 to 1:12; and   wherein the second solution has a concentration of hydrochloric acid of approximately 10% to 20% by volume.   
     
     
         3 . The system for cleaning platinum residues from a surface of a substrate as recited in  claim 1 ,
 wherein the process chamber includes a temperature adjuster for adjusting a temperature of the process chamber;   wherein the controller is configured to control the temperature adjuster.   
     
     
         4 . The system for cleaning platinum residues from a surface of a substrate as recited in  claim 3 ,
 wherein the controller is configured to control the temperature adjuster and the first dispenser to provide the exposure of the substrate to the first solution at approximately 20 to 30 degrees Celsius for approximately 3 to 7 minutes.   
     
     
         5 . The system for cleaning platinum residues from a surface of a substrate as recited in  claim 3 ,
 wherein the controller is configured to control the temperature adjuster and the first dispenser to provide the exposure of the substrate to the second solution at approximately 40 to 80 degrees Celsius for approximately 1 to 5 minutes.   
     
     
         6 . The system for cleaning platinum residues from a surface of a substrate as recited in  claim 3 ,
 wherein the controller is configured to control the temperature adjuster and the first dispenser to provide the exposure to the second solution at approximately 60 to 80 degrees Celsius for approximately 1 to 3 minutes.   
     
     
         7 . The system for cleaning platinum residues from a surface of a substrate as recited in  claim 3 , further comprising,
 a deionized water source containing deionized water;   wherein the process chamber includes a third dispenser for dispensing the deionized water;   wherein the controller is configured to control the third dispenser to rinse the surface of the substrate with de-ionized water after the exposure to the first solution and before the exposure to the second solution.   
     
     
         8 . The method for cleaning platinum residues from a surface of a substrate as recited in  claim 7 ,
 wherein the controller is configured to control the temperature adjuster and the third dispenser to provide the rinsing of the surface of the substrate at approximately 20 to 30 degrees Celsius for approximately 1 to 3 minutes.