Pattern forming method and manufacturing method of semiconductor device

Abstract

A disclosed manufacturing method of a semiconductor device includes laminating a substrate, an etched film, an anti-reflective coating film, and a resist film; forming a pattern made of the resist film using a photolithographic technique; forming the third mask pattern array by a mask pattern forming method; and a seventh step of forming a fourth mask pattern array by processing the etched film using the third mask pattern array.

What is claimed is: 
     
         1 . A manufacturing method of a semiconductor device comprising:
 laminating a substrate, an etched film, an anti-reflective coating film, and a resist film;   forming a pattern made of the resist film using a photolithographic technique;   forming, by a mask pattern forming method, the third mask pattern array, the mask pattern forming method including
 a first step of isotropically coating a surface of a resist pattern array which is formed on an anti-reflective coating film and has a predetermined line width with a silicon oxide film until a gap in the resist pattern array becomes a predetermined size; 
 a second step of embedding the gap in the resist pattern array coated by the silicon oxide film with a carbon film and coating an upper portion of the resist pattern array coated by the silicon oxide film with the carbon film; 
 a third step of removing the carbon film from the upper portion of the resist pattern array coated by the silicon oxide film and etching back the carbon film while leaving the carbon film within the gap in the resist pattern array coated by the silicon oxide film, wherein the removing and etching back is carried out in any order; 
 a fourth step of removing the remaining carbon film and etching back the upper portion of the resist pattern array to have a predetermined film thickness, wherein the removing and etching back is carried out in any order; 
 a first mask pattern array forming step of forming a first mask pattern array which is made of the silicon oxide film, which has a center portion having a predetermined width and film sidewall portions sandwiching the predetermined width of the center portion, and alternately arranged with a space width substantially the same as the predetermined line width on the anti-reflective coating film provided by an ashing process applied to the resist pattern array exposed from the removed silicon oxide film; 
 a sixth step of forming a second mask pattern array made of the film sidewall portions which are left on the anti-reflective coating film after removing the center portion from the first mask pattern array and etching back the silicon oxide film; and 
 a third mask pattern array forming step of forming a third mask pattern array which is made of at least the anti-reflective coating film and extends in a direction by etching the anti-reflective coating film with the second mask pattern array; and 
   a seventh step of forming a fourth mask pattern array by processing the etched film using the third mask pattern array.   
     
     
         2 . The manufacturing method of a semiconductor device according to  claim 1 ,
 wherein the etched film contains silicon nitride, silicon oxide, silicon oxynitride, amorphous silicon, or polysilicon.   
     
     
         3 . The manufacturing method of a semiconductor device according to  claim 1 ,
 wherein a fifth treatment gas containing a gas of a CF system, a gas of a CHF system, a gas of a CH system, or an oxygen gas is supplied in the seventh step to process the etched film using the third mask pattern array.   
     
     
         4 . The manufacturing method of a semiconductor device according to  claim 3 ,
 wherein the fifth treatment gas contains CHF 3 , CF 4 , or an oxygen gas.   
     
     
         5 . A manufacturing method of a semiconductor device comprising:
 laminating a substrate, a first etched film, a second etched film, and a first anti-reflective coating film;   a fourth mask pattern array forming step of forming, by a mask pattern forming method, a third mask pattern array, the mask pattern forming method including
 a first step of isotropically coating a surface of a resist pattern array which is formed on an anti-reflective coating film and has a predetermined line width with a silicon oxide film until a gap in the resist pattern array becomes a predetermined size; 
 a second step of embedding the gap in the resist pattern array coated by the silicon oxide film with a carbon film and coating an upper portion of the resist pattern array coated by the silicon oxide film with the carbon film; 
 a third step of removing the carbon film from the upper portion of the resist pattern array coated by the silicon oxide film and etching back the carbon film while leaving the carbon film within the gap in the resist pattern array coated by the silicon oxide film, wherein the removing and etching back is carried out in any order; 
 a fourth step of removing the remaining carbon film and etching back the upper portion of the resist pattern array to have a predetermined film thickness, wherein the removing and etching back is carried out in any order; 
 a first mask pattern array forming step of forming a first mask pattern array which is made of the silicon oxide film, which has a center portion having a predetermined width and film sidewall portions sandwiching the predetermined width of the center portion, and alternately arranged with a space width substantially the same as the predetermined line width on the anti-reflective coating film provided by an asking process applied to the resist pattern array exposed from the removed silicon oxide film; 
 a sixth step of forming a second mask pattern array made of the film sidewall portions which are left on the anti-reflective coating film after removing the center portion from the first mask pattern array and etching back the silicon oxide film; and 
 a third mask pattern array forming step of forming a third mask pattern array which is made of at least the anti-reflective coating film and extends in a direction by etching the anti-reflective coating film with the second mask pattern array as a fourth mask pattern array extending in a first direction using the first anti-reflective coating film as the anti-reflective coating film; 
   a fifth mask pattern array forming step of forming a fifth mask pattern array by processing the second etched film using the fourth mask pattern array;   a laminating step of laminating a second anti-reflective coating film to embed the fifth mask pattern array;   a sixth mask pattern array forming step of forming the third mask pattern array by the mask pattern forming method according as a sixth mask pattern array extending in a second direction crossing the first direction using the second anti-reflective coating film as the anti-reflective coating film; and   a seventh mask pattern array forming step of forming a seventh mask pattern array which has holes arranged in the first and second directions using the fifth mask pattern array and the sixth mask pattern array.   
     
     
         6 . The manufacturing method of a semiconductor device according to  claim 5 ,
 wherein an angle between the first direction and the second direction is 90 degrees.   
     
     
         7 . A manufacturing method of a semiconductor device comprising:
 laminating a substrate, a first etched film, a second etched film, and a first anti-reflective coating film;   a fourth mask pattern array forming step of forming the third mask pattern array by the mask pattern forming method according to claim  15  as a fourth mask pattern array extending in a first direction using the first anti-reflective coating film as the anti-reflective coating film;   a fifth mask pattern array forming step of forming a fifth mask pattern array by processing the second etched film using the fourth mask pattern array;   a laminating step of laminating a second anti-reflective coating film to embed the fifth mask pattern array;   a sixth mask pattern array forming step of forming, by a mask pattern forming method, a third mask pattern array, the mask pattern forming method including
 a first step of isotropically coating a surface of a resist pattern array which is formed on an anti-reflective coating film and has a predetermined line width with a silicon oxide film until a gap in the resist pattern array becomes a predetermined size; 
 a second step of embedding the gap in the resist pattern array coated by the silicon oxide film with a carbon film and coating an upper portion of the resist pattern array coated by the silicon oxide film with the carbon film; 
 a third step of removing the carbon film from the upper portion of the resist pattern array coated by the silicon oxide film and etching back the carbon film while leaving the carbon film within the gap in the resist pattern array coated by the silicon oxide film, wherein the removing and etching back is carried out in any order; 
 a fourth step of removing the remaining carbon film and etching back the upper portion of the resist pattern array to have a predetermined film thickness, wherein the removing and etching back is carried out in any order; 
 a first mask pattern array forming step of forming a first mask pattern array which is made of the silicon oxide film, which has a center portion having a predetermined width and film sidewall portions sandwiching the predetermined width of the center portion, and alternately arranged with a space width substantially the same as the predetermined line width on the anti-reflective coating film provided by an ashing process applied to the resist pattern array exposed from the removed silicon oxide film; 
 a sixth step of forming a second mask pattern array made of the film sidewall portions which are left on the anti-reflective coating film after removing the center portion from the first mask pattern array and etching back the silicon oxide film; and 
 a third mask pattern array forming step of forming a third mask pattern array which is made of at least the anti-reflective coating film and extends in a direction by etching the anti-reflective coating film with the second mask pattern array as a sixth mask pattern array extending in a second direction crossing the first direction using the second anti-reflective coating film as the anti-reflective coating film; 
   a seventh mask pattern array forming step of forming a seventh mask pattern array which has dots arranged in the first and second directions by processing the fifth mask pattern array using the sixth mask pattern array; and   an eighth mask pattern array forming step of forming an eighth mask pattern array by processing the first etched film using the seventh mask pattern array.   
     
     
         8 . The manufacturing method of a semiconductor device according to  claim 7 ,
 wherein an angle between the first direction and the second direction is 90 degrees.