Sealing device and method of producing the same
Abstract
A sealing device for sealing a first side against a second side of a machine part, wherein the sealing device has a sealing element which contacts a counter element. At least a part of the sealing element and/or at least a part of the counter element is coated with a layer consisting of or containing fullerene-like carbon nitride (FL—CNx), wherein an inter-layer of chromium (Cr) or aluminium (Al) or molybdenum (Mo) or titanium (Ti) or tungsten (W) or a diamond-like coating (DLC) or a metal-mix diamond-like coating (Me-DLC) is arranged between the surface of the sealing element and the layer consisting of or containing fullerene-like carbon nitride and/or between the surface of the counter element and the layer consisting of or containing fullerene-like carbon nitride.
Claims
exact text as granted — not AI-modified1 . Sealing device for sealing a first side against a second side of a machine part, wherein the sealing device has a sealing element which contacts a counter element, wherein at least a part of the sealing element or at least a part of the counter element is coated with a layer consisting of or containing fullerene-like carbon nitride (FL—CNx), wherein an inter-layer is arranged between a surface of the sealing element and the layer consisting of or containing fullerene-like carbon nitride or between a surface of the counter element and the layer consisting of or containing fullerene-like carbon nitride, and wherein the inter-layer consists of chromium (Cr) or aluminum (Al) or molybdenum (Mo) or tungsten (W) or a diamond-like coating (DLC) or a metal-mix diamond-like coating (Me-DLC).
2 . Sealing device according to claim 1 , wherein a contact area between the sealing element and the counter element is coated with the layer consisting of or containing fullerene-like carbon nitride.
3 . Sealing device according to claim 1 , wherein the sealing element is comprised of rubber material or of elastomer material or of polytetraflourethylene (PTFE).
4 . Sealing device according to claim 1 , wherein the sealing element is pressed against the counter element by a spring.
5 . Sealing device according to claim 1 , wherein the layer consisting of or containing fullerene-like carbon nitride possesses a thickness between 0.1 μm and 10 μm.
6 . Sealing device according to claim 1 , wherein the interlayer possesses a thickness between 1 nm and 5 μm.
7 . Sealing device according to claim 1 , wherein the layer consisting of or containing fullerene-like carbon nitride is deposited on the sealing element or on the counter element by magnetron sputtering.
8 . Sealing device according to claim 1 , wherein the layer consisting of or containing fullerene-like carbon nitride is deposited on the sealing element or on the counter element by physical vapour deposition (PVD).
9 . Sealing device according to claim 1 , wherein the layer consisting of or containing fullerene-like carbon nitride is deposited on the sealing element or on the counter element by chemical vapour deposition (CVD).
10 . Sealing element according to claim 1 , wherein the layer consisting of or containing fullerene-like carbon nitride is deposited on the sealing element or on the counter element by a hybrid of physical vapour deposition (PVD) and chemical vapour deposition (CVD).
11 . Sealing device according to claim 1 , wherein the temperature of the sealing element or the counter element during deposition of the layer consisting of or containing fullerene-like carbon nitride is kept below 180° C.
12 . Sealing device according to claim 1 , wherein elements other than nitrogen (N) are doped or alloyed in the fullerene-like carbon nitride.
13 . Sealing element according to claim 12 , wherein the elements other than nitrogen (N) that are doped or alloyed in the fullerene-like carbon nitride include one or more of phosphorus (P), sulfur (S), and boron (B).
14 . Sealing element according to claim 1 , wherein the fullerene-like carbon nitride (FL—CNx) has a ratio H/E>0.1, wherein H is the Meyer hardness (in GPa) and E is the Young's modulus (in GPa).
15 . Sealing element according to claim 14 , wherein the ratio H/E is between 0.12 and 0.2.
16 . Method for producing a sealing device according to claim 1 , wherein the layer consisting of or containing fullerene-like carbon nitride or the inter-layer is deposited on the sealing element or on the counter element by magnetron sputtering.
17 . Method for producing a sealing device according to claim 1 , wherein the layer consisting of or containing fullerene-like carbon nitride or the inter-layer is deposited on the sealing element or on the counter element by physical vapour deposition (PVD).
18 . Method for producing a sealing device according to claim 1 , wherein the layer consisting of or containing fullerene-like carbon nitride or the inter-layer is deposited on the sealing element or on the counter element by chemical vapour deposition (CVD).
19 . Method for producing a sealing device according to claim 1 , wherein the layer consisting of or containing fullerene-like carbon nitride or the inter-layer is deposited on the sealing element or on the counter element by a hybrid of physical vapour deposition (PVD) and chemical vapour deposition (CVD).
20 . Method for producing a sealing device according to claim 1 , wherein the temperature of the sealing element or the counter element during deposition of the layer consisting of or containing fullerene-like carbon nitride or the inter-layer is kept below 180° C.Join the waitlist — get patent alerts
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