US2013108501A1PendingUtilityA1

Method of Releasing High Temperature Films and/or Devices From Metallic Substrates

Assignee: DOW CORNINGPriority: Sep 29, 2005Filed: Dec 12, 2012Published: May 2, 2013
Est. expirySep 29, 2025(expired)· nominal 20-yr term from priority
B29C 37/0067Y10T29/49227B22C 3/00C08J 2383/04Y10T29/49155C08J 5/18C09D 183/04Y10T428/31663Y10T29/49124
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Claims

Abstract

Films and electronic devices can be released from metallic substrates by: (i) applying a coating of a polysilsesquioxane resin to a metallic substrate, (ii) heating the coated metallic substrate to a temperature sufficient to cure the polysilsesquioxane resin, (iii) applying a polymeric film to the cured coating on the metallic substrate, (iv) further heating the coated metallic substrate to a temperature sufficient to cure the polymeric film, (v) optionally fabricating electronic devices on the polymeric film, and (vi) releasing the polymeric film from the metallic substrate.

Claims

exact text as granted — not AI-modified
1 - 7 . (canceled) 
     
     
         8 . A method comprising:
 (i) applying a coating of a polysilsesquioxane resin between an electronic device and a metallic substrate,   (ii) heating the coated metallic substrate to a temperature sufficient to cure the polysilsesquioxane resin, and   (iii) releasing the electronic device from the metallic substrate.   
     
     
         9 . The method according to  claim 8  in which the electronic device is released from the metallic substrate by contacting the coated metallic substrate with an acid, and removing the metallic substrate from the electronic device. 
     
     
         10 . The method according to  claim 8  in which the electronic device is released from the metallic substrate by contacting the coated metallic substrate with a base, and removing the metallic substrate from the electronic device. 
     
     
         11 . The method according to  claim 8  in which the electronic device is a photovoltaic cell, a battery, or an electronic display. 
     
     
         12 . An electronic device prepared by the method according to  claim 8 . 
     
     
         13 . A method comprising:
 (i) applying a coating of a polysilsesquioxane resin to a metallic substrate,   (ii) heating the coated metallic substrate to a temperature sufficient to cure the polysilsesquioxane resin,   (iii) applying a precious metal film to the cured coating on the metallic substrate, and   (iv) releasing the precious metal film from the metallic substrate.   
     
     
         14 . The method according to  claim 13  in which the precious metal film is released from the metallic substrate by contacting the coated metallic substrate with an acid, and removing the precious metal film from the metallic substrate. 
     
     
         15 . The method according to  claim 13  in which the precious metal film is released from the metallic substrate by contacting the coated metallic substrate with a base, and removing the precious metal film from the metallic substrate. 
     
     
         16 . A precious metal film prepared according to  claim 13 .

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