Semiconductor component having a stack of semiconductor chips and method for producing the same

Abstract

A semiconductor component including a stack of semiconductor chips, the semiconductor chips being fixed cohesively one on top of another, is disclosed. The contact areas of the semiconductor chips are led as far as the edges of the semiconductor chips and conductor portions extend at least from an upper edge to a lower edge of the edge sides of the semiconductor chips in order to electrically connect the contact area of the stacked semiconductor chips to one another.

What is claimed is: 
     
         1 . A semiconductor component comprising:
 a stack of semiconductor chips, the semiconductor chips being arranged in a manner fixed cohesively one on top of another, the semiconductor chips each comprising a top side and a rear side with edge sides extending there between and having contact areas extending as far as the edge sides of the semiconductor chips, the contact areas having regions accessible from both the top side and the edge sides of the semiconductor chips; and   conductor portions extending from at least one upper edge to a lower edge of the edge sides of the semiconductor chips and electrically connecting the contact areas of the semiconductor chips of the semiconductor chip stack via at least the regions of the contact areas accessible from the edge sides of the semiconductor chips.   
     
     
         2 . The semiconductor component as claimed in  claim 1 , comprising the semiconductor chips having two or more different chip sizes. 
     
     
         3 . The semiconductor component as claimed in  claim 1 , comprising the semiconductor chips having a different number of contact areas at their edges. 
     
     
         4 . The semiconductor component as claimed in  claim 1 , wherein the contact areas are arranged on one or more of the semiconductor edge sides, the semiconductor top side, and the semiconductor rear side so as to enable a freely selectable stacking order for the semiconductor chips forming the stack. 
     
     
         5 . The semiconductor component as claimed in  claim 1 , comprising where the conductor portions comprise an adherent plastic resist which is filled with metallic nanoparticles and is electrically conductive. 
     
     
         6 . The semiconductor component as claimed in  claim 5 , comprising were the nanoparticle-filled plastic resist is soluble in a solvent. 
     
     
         7 . The semiconductor component as claimed in  claim 1 , comprising where the nanoparticle-filled plastic resist is patterned by laser removal. 
     
     
         8 . The semiconductor component as claimed in  claim 1 , comprising where the nanoparticle-filled plastic resist is patterned photolithographically. 
     
     
         9 . The semiconductor component as claimed in  claim 1 , comprising where the semiconductor chip stack comprises a multilayer rewiring layer comprising nanoparticle-filled electrically conductive patterned plastic resist layers and insulation layers arranged in between on the edge sides of the semiconductor chips. 
     
     
         10 . A semiconductor component comprising:
 a stack of semiconductor chips, the semiconductor chips being arranged in a manner fixed cohesively one on top of another, the semiconductor chips comprising contact areas extending as far as the edges of the semiconductor chips;   conductor portions extending from at least one upper edge to a lower edge of the edge sides of the semiconductor chips and electrically connecting the contact areas of the semiconductor chips of the semiconductor chip stack;   where the electrically conductive conductor portions are arranged adhesively on the semiconductor chip edges, the semiconductor edge sides, the semiconductor top side and/or the semiconductor rear side with a freely selectable stacking order; and   where the conductor portions comprise an adherent plastic resist which is filled with metallic nanoparticles and is electrically conductive.   
     
     
         11 . The semiconductor component as claimed in  claim 10 , comprising were the nanoparticle-filled plastic resist is soluble in a solvent. 
     
     
         12 . The semiconductor component as claimed in  claim 10 , comprising where the nanoparticle-filled plastic resist is patterned by laser removal. 
     
     
         13 . The semiconductor component as claimed in  claim 10 , comprising where the nanoparticle-filled plastic resist is patterned photolithographically. 
     
     
         14 . The semiconductor component as claimed in  claim 10 , comprising where the semiconductor chip stack comprises a multilayer rewiring layer comprising nanoparticle-filled electrically conductive patterned plastic resist layers and insulation layers arranged in between on the edge sides of the semiconductor chips. 
     
     
         15 . The semiconductor component as claimed in  claim 14 , comprising the semiconductor chips having two or more different chip sizes; and having a different number of contact areas at their edges. 
     
     
         16 . A semiconductor component comprising:
 a stack of semiconductor chips, the semiconductor chips being arranged in a manner fixed cohesively one on top of another, the semiconductor chips comprising contact areas extending as far as the edges of the semiconductor chips; and   means for providing conductor portions extending from at least one upper edge to a lower edge of the edge sides of the semiconductor chips and electrically connecting the contact areas of the semiconductor chips of the semiconductor chip stack.