US2013105559A1PendingUtilityA1

Conductive sidewall for microbumps

Assignee: QUALCOMM INCPriority: Jul 16, 2010Filed: Dec 13, 2012Published: May 2, 2013
Est. expiryJul 16, 2030(~4 yrs left)· nominal 20-yr term from priority
H10W 90/722H10W 90/00H10W 72/9415H10W 72/07253H10W 72/07236H10W 72/07232H10W 72/01955H10W 72/01953H10W 72/01938H10W 72/01935H10W 72/01257H10W 72/01255H10W 72/01253H10W 72/01238H10W 72/01235H10W 72/952H10W 72/923H10W 72/252H10W 72/242H10W 72/241H10W 72/234H10W 72/224H10W 72/0112H10W 72/072H10W 72/29H10W 72/012H10W 90/701H10W 70/652H10W 20/056H01L 21/76877H01L 24/81
49
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

Electromigration in microbump connections causes voids in the microbumps, which reduces the lifetime of an integrated circuit containing the microbump, Electromigration lifetime may be increased in microbumps by forming a copper shell around the solder. The copper shell of one microbump contacts the copper shell of a second microbump to enclose the solder of the microbump connection. The copper shell allows higher current densities through the microbump. Thus, smaller microbumps may be manufactured on a smaller pitch without suffering failure from electromigration. Additionally, the copper shell reduces shorting or bridging between microbump connections on a substrate.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A method, comprising:
 forming an opening in a sacrificial layer on a contact pad of a substrate;   depositing a first conductive layer covering sidewalls of the opening and a bottom of the opening; and   depositing a second conductive layer inside the first conductive layer, the second conductive layer having a lower melting point than the first conductive layer.   
     
     
         2 . The method of  claim 1 , in which depositing the first conductive layer comprises electroplating copper and/or nickel. 
     
     
         3 . The method of  claim 1 , in which depositing the second conductive layer comprises electroplating tin and/or silver. 
     
     
         4 . The method of  claim 1 , further comprising depositing an underbump metal (UBM) layer on the contact pad before depositing the first conductive layer, the first conductive layer partially covering a surface of the UBM layer. 
     
     
         5 . The method of  claim 4 , further comprising depositing a passivation layer on the substrate, prior to depositing the UBM layer. 
     
     
         6 . The method of  claim 1 , in which forming the opening comprises: patterning the sacrificial layer;
 depositing a seed layer; and   etching back the seed layer.   
     
     
         7 . The method, of  claim 6 , in which the seed layer comprises titanium and/or copper. 
     
     
         8 . The method of  claim 1 , further comprising heating the second conductive layer while not reflowing the first conductive layer. 
     
     
         9 . The method of  claim 1 , further comprising bonding the second conductive material to a third conductive material of another substrate. 
     
     
         10 . The method, of  claim 1 , further comprising integrating the substrate into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit. 
     
     
         11 . A method, comprising:
 selecting a first substrate with a first plurality of microbumps having a first conductive material and a second conductive material substantially contained within the first conductive material;   selecting a second substrate with a second plurality of microbumps having a first conductive material and a second conductive material substantially contained within the first conductive material;   aligning microbumps of the first plurality of microbumps with microbumps of the second plurality of microbumps; and   forming a bond between microbumps of the first plurality of microbumps and microbumps of the second plurality of microbumps such that the first conductive material of the first plurality of microbumps contacts the first conductive material of the second plurality of microbumps.   
     
     
         12 . The method of  claim 11 , in which forming the bond, comprises forming a thermo compression bond. 
     
     
         13 . The method of  claim 11 , in which the selected second substrate is symmetric with the selected first substrate. 
     
     
         14 . The method of  claim 11 , further comprising integrating the first and second substrates into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit.

Join the waitlist — get patent alerts

Track US2013105559A1 — get alerts on status changes and closely related new filings.

We store only your email — no account needed. See our privacy policy.