Film-forming method and film-forming apparatus

Abstract

A film-forming method and apparatus for performing vapor phase growth reaction avoiding a substrate becoming adhered to a substrate supporting portion, comprising: placing a substrate on a substrate supporting portion in a film-forming chamber, supplying a source gas into the film-forming chamber while the substrate is rotating on a cylindrical portion for supporting the substrate supporting portion thereon, supplying a purge gas into the cylindrical portion and forming a film on the substrate while at least a part of the substrate is vibrating up and down on the substrate supporting portion by discharge of the purge gas from between the substrate and the substrate supporting portion. The vibration allowing the substrate to not become adhered to the substrate supporting portion, and thus increase throughput of the operation.

What is claimed is: 
     
         1 . A film-forming method comprising:
 placing a substrate on a substrate supporting portion in a film-forming chamber;   supplying a source gas into the film-forming chamber while the substrate is rotating on a cylindrical portion supporting the substrate supporting portion thereon;   supplying a purge gas into the cylindrical portion and forming a film on the substrate while at least a part of the substrate is risen on the substrate supporting portion by discharge of the purge gas from between the substrate and the substrate supporting portion.   
     
     
         2 . The film-forming method according to  claim 1 , wherein the pressure of the cylindrical portion is higher than the pressure in the film-forming chamber. 
     
     
         3 . The film-forming method according to  claim 1 , wherein the purge gas and the source gas are supplied at the same time. 
     
     
         4 . The film-forming method according to  claim 3 , wherein the amount of purge gas is temporarily increased while the source gas is supplied, thereby at least a part of the substrate is risen on the substrate supporting portion. 
     
     
         5 . The film-forming method according to  claim 4 , wherein a period of increasing the amount of purge gas is one continuous period. 
     
     
         6 . The film-forming method according to  claim 4 , wherein a plurality of periods for increasing the amount the purge gas are intermittently set. 
     
     
         7 . The film-forming method according to  claim 4 , wherein the amount of purge gas is temporarily increased to ten times or more. 
     
     
         8 . The film-forming method according to  claim 1 , wherein the purge gas is supplied when the supply of the source gas is stopped, thereby at least a part of the substrate is risen on the substrate supporting portion. 
     
     
         9 . The film-forming method according to  claim 8 , wherein a period of supplying purge gas is one continuous period. 
     
     
         10 . The film-forming method according to  claim 8 , wherein supplying purge gas is performed in a plurality times. 
     
     
         11 . The film-forming method according to  claim 10 , wherein the purge gas is supplied for the same period, or a smaller period, as the period for stopping supply of the source gas. 
     
     
         12 . The film-forming method according to  claim 8 , wherein an amount of purge gas is temporarily increased, thereby at least a part of the substrate is risen on the substrate supporting portion. 
     
     
         13 . The film-forming method according to  claim 12 , wherein the amount of purge gas is temporarily increased to ten times or more. 
     
     
         14 . The film-forming method according to  claim 1 , wherein the purge gas is at least one selected in the group consisting of argon gas, helium gas hydrogen gas and nitrogen gas. 
     
     
         15 . A film-forming apparatus comprising:
 a film-forming chamber;   a source gas supply portion for supplying a source gas into the film-forming chamber;   a substrate supporting portion for holding a substrate in the film-forming chamber;   a rotating portion having a cylindrical portion for supporting the substrate supporting portion;   a purge gas supply portion for supplying the purge gas into the cylindrical portion; and   a control unit for controlling the supply of the source gas and the purge gas so that the purge gas is discharged from between the substrate and the substrate supporting portion, thereby at least a part of the substrate is risen on the substrate supporting portion.   
     
     
         16 . The film-forming apparatus according to  claim 15 , wherein the substrate supporting portion includes a counterbore for positioning the substrate thereon; and
 an overhanging portion provided at the upper portion of the counterbore and overhangs to the internal of the substrate supporting portion.   
     
     
         17 . The film-forming apparatus according to  claim 15 , further comprising a discharge portion for discharging the purge gas from the cylindrical portion.