System and method for commercial fabrication of patterned media

Abstract

A system is provided for etching patterned media disks for hard drive. The modular system may be tailored to perform specific processes sequences so that a patterned media disk is fabricated without removing the disk from vacuum environment. In some sequence the magnetic stack is etched while in other the etch is performed prior to forming the magnetic stack. In a further sequence ion implantation is used without etching steps. For etching a movable non-contact electrode is utilized to perform sputter etch. The cathode moves to near contact distance to, but not contacting, the substrate so as to couple RF energy to the disk. The substrate is held vertically in a carrier and both sides are etched serially. That is, one side is etched in one chamber and then in the next chamber the second side is etched.

1 . A patterning system for fabricating patterned media disks in a vacuum environment, comprising:
 at least one pair of etch chambers, wherein the pair of etch chambers is configured such that one etch chamber of the pair etches one side of the disk and the other etch chamber of the pair etches the other side of the disk to thereby etch both sides of the disk;   at least one carbon overcoat deposition chamber;   at least one planarization chamber;   at least one refill deposition chamber; and,   wherein the patterning system is configured such that once the disk enters system it never leaves the vacuum environment until it has been processed in the at least one pair of etch chambers, the at least one carbon overcoat deposition chamber, the at least one planarization chamber, and the at least one refill deposition chamber.   
     
     
         2 . The system of  claim 1 , wherein the disk is held vertically in a carrier, and the disk carrier moves the disk between the chambers. 
     
     
         3 . The system of  claim 2 , wherein each of the etch chambers comprises a movable non-contact electrode, which is configured to move to near contact distance to, but not contacting, the disk so as to capacitively couple RF energy to the disk. 
     
     
         4 . The system of  claim 3 , wherein each of the etch chambers has a showerhead on one side and the movable non-contact electrode on the opposite side. 
     
     
         5 . The system of  claim 4 , wherein in each of the etch chambers, an RF power is coupled to the movable non-contact electrode, which capacitively couples the RF power to the disk through one surface of the disk, such that plasma is ignited in a void between opposite surface of the disk and the showerhead, to thereby sputter material from the opposite surface of the disk. 
     
     
         6 . The system of  claim 1 , wherein a cooling chamber is interposed between each etch chamber of the pair of etch chambers. 
     
     
         7 . The system of  claim 2 , wherein the disk is held in the carrier by its periphery without touching any of the disk's surfaces. 
     
     
         8 . The system of  claim 1 , further comprising a de-scum chamber. 
     
     
         9 . The system of  claim 1 , wherein each of the etch chambers comprises a movable cathode, wherein when the movable cathode is configured such that when it moves very close to one surface of the disk, it capacitively couples RF bias energy to the disk, so that plasma species are accelerated towards the disk so as to etch the opposite surface of the disk. 
     
     
         10 . The system of  claim 9 , wherein the electrode has a center hole matching center hole of the disk. 
     
     
         11 . The system of  claim 10 , wherein the electrode is configured to be moved by a motion assembly so as to be in a retracted mode during disk motion and in an extended mode during etching. 
     
     
         12 . The system of  claim 11 , wherein each etch chamber further comprises an electrode cover provided about the electrode and extends beyond the electrode so that when the electrode is moved very close to one surface of the disk, the electrode cover covers the edges of the disk. 
     
     
         13 . The system of  claim 9 , wherein each etch chamber comprises a proximity sensor to enhance placement accuracy of the electrode and prevent collision with the disk. 
     
     
         14 . The system of  claim 10 , wherein each etch chamber comprises fluid pipes to provide fluid as a heat exchange medium to the electrode. 
     
     
         15 . The system of  claim 14 , wherein each etch chamber comprises gas injectors. 
     
     
         16 . The system of  claim 1 , further comprising ion implantation chamber. 
     
     
         17 . The system of  claim 16 , wherein the ion implantation chamber is configured to process one side of the disk at a time. 
     
     
         18 . A system for fabricating patterned media disks, comprising:
 a plurality of processing chambers, each having an independent vacuum environment;   a transport system for transporting a disk carrier from one chamber to the next without leaving vacuum atmosphere;   wherein the plurality of processing chambers comprises:
 at least one etching chamber; 
 at least one refill sputtering chamber; and, 
 at least one etch back chamber. 
   
     
     
         19 . The system of  claim 18 , further comprising a cooling chamber positioned following the etch chamber. 
     
     
         20 . The system of  claim 18 , wherein the etch chamber comprises:
 a main chamber body having a first side and a second side opposite the first side;   a precursor gas delivery assembly coupled to the first side;   a movable cathode assembly coupled to the second side.   
     
     
         21 . The system of  claim 18 , wherein the plurality of processing chamber comprise at least a first and a second etch chambers, wherein the first etch chamber comprises:
 a first main chamber body having a first side and a second side opposite the first side;   a first precursor gas delivery assembly coupled to the first side;   a first movable cathode assembly coupled to the second side; and, the second etch chamber follows the first etch chamber and comprises:   a second main chamber body having a third side and a fourth side, the third side being opposite the second side and the fourth side being opposite the first side;   a second precursor gas delivery assembly coupled to the fourth side;   a second movable cathode assembly coupled on the third side.   
     
     
         22 . The system of  claim 18 , further comprising a hard mask sputtering chamber. 
     
     
         23 . The system of  claim 18 , further comprising a hard mask etching chamber.