Semiconductor device manufacturing method and substrate processing apparatus

Abstract

Provided is a semiconductor device manufacturing method of forming a film of less than one atomic layer on a substrate. The method includes (a) supplying a source gas into a processing chamber accommodating the substrate to adsorb the source gas on the substrate; (b) supplying a reactive gas different from the source gas into the processing chamber to cause a reaction of the reactive gas with the source gas adsorbed on the substrate before the source gas is saturatively adsorbed on the substrate; (c) removing an inner atmosphere of the processing chamber; and (d) supplying a modifying gas into the processing chamber to modify the source gas adsorbed on the substrate.

What is claimed is: 
     
         1 . A semiconductor device manufacturing method of forming a film of less than one atomic layer on a substrate, the method comprising:
 (a) supplying a source gas into a processing chamber accommodating the substrate to adsorb the source gas on the substrate;   (b) supplying a reactive gas different from the source gas into the processing chamber to cause a reaction of the reactive gas with the source gas adsorbed on the substrate before the source gas is saturatively adsorbed on the substrate;   (c) removing an inner atmosphere of the processing chamber; and   (d) supplying a modifying gas into the processing chamber to modify the source gas adsorbed on the substrate.   
     
     
         2 . The method according to  claim 1 , wherein the reactive gas comprises a chlorine (Cl)-containing gas, and the source gas includes a metal source and the modifying gas includes at least one of an oxygen (O)-containing gas and a nitrogen (N)-containing gas. 
     
     
         3 . The method according to  claim 1 , wherein step (d) comprises activating the modifying gas using at least one of heat, light, and plasma. 
     
     
         4 . The method according to  claim 1 , wherein the method is performed by setting the substrate to a temperature of about 200° C. to about 550° C. 
     
     
         5 . The method according to  claim 4 , wherein the method is performed by setting the substrate to a temperature of about 300° C. to about 450° C. 
     
     
         6 . The method according to  claim 1 , wherein the method is performed by setting the substrate to a temperature equal to or lower than a self-decomposition temperature of the source gas. 
     
     
         7 . The method according to  claim 1 , wherein the film of less than one atomic layer is formed on the substrate by utilizing a point of inflection of a growth rate of the film. 
     
     
         8 . A semiconductor device manufacturing method of forming a film of less than one atomic layer on a substrate, the method comprising:
 (a) supplying a source gas into a processing chamber accommodating the substrate to adsorb the source gas on the substrate;   (b) supplying a reactive gas different from the source gas into the processing chamber to cause a reaction of the reactive gas with the source gas adsorbed on the substrate before the source gas is saturatively adsorbed on the substrate;   (c) removing an inner atmosphere of the processing chamber;   (d) supplying a modifying gas into the processing chamber to modify the source gas adsorbed on the substrate.;   (e) removing the inner atmosphere of the processing chamber; and   (f) supplying the modifying gas into the processing chamber while activating the modifying gas to modify the source gas adsorbed on the substrate,   wherein steps (a) to (f) are sequentially performed.   
     
     
         9 . The method according to  claim 8 , wherein the film of less than one atomic layer is formed on the substrate by utilizing a point of inflection of a growth rate of the film. 
     
     
         10 . A substrate processing apparatus comprising:
 a processing chamber configured to accommodate a substrate;   a source gas supply system configured to supply a source gas into the processing chamber;   a reactive gas supply system configured to supply a reactive gas different from the source gas into the processing chamber;   a modifying gas supply system configured to supply a modifying gas into the processing chamber;   an exhaust system configured to exhaust an inside of the processing chamber; and   a controller configured to control the source gas supply system, the reactive gas supply system, the modifying gas supply system and the exhaust system such that a film of less than one atomic layer is formed on the substrate by performing a process including: (a) supplying the source gas into the processing chamber accommodating the substrate to adsorb the source gas on the substrate; (b) supplying the reactive gas into the processing chamber to cause a reaction of the reactive gas with the source gas adsorbed on the substrate before the source gas is saturatively adsorbed on the substrate; (c) removing an inner atmosphere of the processing chamber; and (d) supplying the modifying gas into the processing chamber to modify the source gas adsorbed on the substrate, the source gas being reacted with the reactive gas.